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Pre-doping Effects On Ni Fully Silicided Metal Gate On Sio_2 Dielectric

机译：Sio_2介电层对Ni全硅化金属栅极的预掺杂影响

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摘要

This paper investigates the effects of ion implantation and spike activation anneal on the work function (WF) modulation of Ni fully silicided (FUS1) metal gate on SiO_2 dielectrics, and on the FUSI gated SiO_2/ Si(1 0 0) interface trap properties by using high-frequency capacitance-voltage (C-V) and photonic high-frequency C-V measurements. Undoped Ni FUSI gate has good thermal stability, and its WF before and after forming gas annealing (FGA) is 4.75 eV and 4.74 eV, respectively. As pre-doping and B pre-doping shift the flatband voltage of the Ni FUSI gated MOS capacitor negatively and positively, respectively. As-doped Ni FUSI gate may delaminate or peel off after FGA. Before FGA, a characteristic D_(ir) peak ranging from 5.7 × 10~(12) to 1.2 × 10~(13) cm~(-2) eV~(-1) was observed at approximately 0.63-0.74 eV above the valence band edge for As-doped and B-doped Ni FUSI gated capacitors which received a spike activation anneal after ion implantation. But such a D_(ir) peak was not observed in undoped Ni FUSI gated capacitors or those doped but without a spike activation anneal. The characteristic peak, which may be related to P_b defects at the SiO_2/Si(1 0 0) interface, could be eliminated after FGA.
机译：本文研究了离子注入和尖峰激活退火对SiO_2电介质上的镍完全硅化（FUS1）金属栅极的功函数（WF）调制以及对FUSI门控的SiO_2 / Si（1 0 0）界面陷阱性质的影响。使用高频电容电压（CV）和光子高频CV测量。未掺杂的Ni FUSI栅极具有良好的热稳定性，形成气体退火（FGA）前后的WF分别为4.75 eV和4.74 eV。当预掺杂和B预掺杂使Ni FUSI门控MOS电容器的平带电压分别负向和正向偏移。 FGA之后，掺杂的Ni FUSI栅极可能会分层或剥离。在FGA之前，在高于化合价约0.63-0.74 eV处观察到D_（ir）的特征峰，范围为5.7×10〜（12）至1.2×10〜（13）cm〜（-2）eV〜（-1）。 As掺杂和B掺杂Ni FUSI门控电容器的带边缘，在离子注入后接受了尖峰激活退火。但是，在未掺杂的Ni FUSI门控电容器或掺杂的电容器中未观察到这样的D_（ir）峰，但未进行尖峰激活退火。 FGA之后可以消除可能与SiO_2 / Si（1 0 0）界面上的P_b缺陷有关的特征峰。

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