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首页> 外文期刊>Applied Surface Science >Influences Of Annealing Temperature On The Optical Properties Of Sio_x Thin Film Prepared By Reactive Magnetron Sputtering
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Influences Of Annealing Temperature On The Optical Properties Of Sio_x Thin Film Prepared By Reactive Magnetron Sputtering

机译：退火温度对反应磁控溅射制备的Sio_x薄膜光学性能的影响

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摘要

SiO_x films with different oxygen contents were prepared by reactive magnetron sputtering and annealed at a temperature range of 200-1000℃ in ambient air atmosphere. The dependences of the film thickness, refractive index and optical gap, as well as the structural and compositional properties on the annealing temperature were studied. Three evolution stages with annealing temperature were observed. The first stage occurs below 400℃, at which the film thickness expands, the refractive index reduces and the optical gap increases. The second stage sets in at around 400-500℃ and persists to a temperature of around 800 ℃. At this stage, film thickness reduces, refractive index increases and the optical gap decreases. The third stage takes place at annealing temperatures above 800 ℃, where the films become inhomogeneous from surface to interface due to oxidization. Stress relaxation, phase separation and oxidation mechanisms were correlated with the optical properties of the annealed films.
机译：通过反应磁控溅射制备了不同氧含量的SiO_x薄膜，并在环境空气中于200-1000℃的温度范围内进行了退火。研究了薄膜厚度，折射率和光学间隙以及结构和组成性质对退火温度的影响。观察到退火温度下的三个演化阶段。第一阶段发生在400℃以下，在该温度下膜厚扩大，折射率降低，光学间隙增大。第二阶段设定在400-500℃左右，并持续到800℃左右。在这一阶段，膜厚度减小，折射率增加并且光学间隙减小。第三阶段在高于800℃的退火温度下进行，由于氧化，薄膜从表面到界面变得不均匀。应力松弛，相分离和氧化机理与退火膜的光学性能相关。

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