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首页> 外文期刊>Applied Surface Science >Effect Of Oxygen Partial Pressure On Structural, Optical And Electrical Properties Of Titanium-doped Cdo Thin Films
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Effect Of Oxygen Partial Pressure On Structural, Optical And Electrical Properties Of Titanium-doped Cdo Thin Films

机译：氧分压对掺钛Cdo薄膜结构，光学和电学性质的影响

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摘要

Titanium-doped CdO thin films were deposited on quartz by pulsed laser deposition. The effect of oxygen partial pressure on optoelectrical properties of these films was studied. It is observed that surface roughness of the films depends on oxygen partial pressure. The root mean square values of surface roughness for the films grown under different oxygen pressure were found to vary from 0.55 to 2.95 nm. Highly conducting (4.41 × 10~4S/cm), and transparent (～78%) film with high mobility (120 cm~2 V~(-1)s~(-1)) is observed for the film grown under oxygen pressure of 1.0 × 10~(-3) mbar. The optical band gap is found varying between 2.45 and 2.67 eV for various oxygen pressure.
机译：钛掺杂的CdO薄膜通过脉冲激光沉积法沉积在石英上。研究了氧分压对这些薄膜的光电性能的影响。观察到膜的表面粗糙度取决于氧分压。发现在不同氧气压力下生长的膜的表面粗糙度的均方根值在0.55至2.95nm之间变化。在氧气压力下生长的薄膜观察到高导​​电性（4.41×10〜4S / cm）和高迁移率（120 cm〜2 V〜（-1）s〜（-1））的透明薄膜（〜78％） 1.0×10〜（-3）毫巴对于各种氧气压力，发现光学带隙在2.45和2.67 eV之间变化。

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