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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Influence of oxygen partial pressure on the structural, optical and electrical properties of Cu-doped NiO thin films
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Influence of oxygen partial pressure on the structural, optical and electrical properties of Cu-doped NiO thin films

机译:氧分压对掺杂Cu的NiO薄膜结构,光学和电学性质的影响

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摘要

The NiO-Cu composite thin films were successfully deposited on Corning 7059 glass substrates at different oxygen partial pressures in the range of 9 × 10~(-5)-6 × 10~(-4) mbar using the dc reactive magnetron sputtering technique. All the deposited films were of polycrystalline nature and exhibited cubic structure with preferential growth. The optical transmittance and band gap of the films increased with increasing the oxygen partial pressure up to 2 × 10~(-4) mbar and decreased on further increasing the oxygen partial pressure. From the surface morphological studies, fine and uniform grains were observed at an oxygen partial pressure of 2 × 10~(-4) mbar. Compositional analysis indicated that Ni content increased and Cu content decreased with increasing the oxygen partial pressure. The resistivity values decreased gradually from 64 to 10 Ω cm with increasing the oxygen pressure to 6 × 10~(-4) mbar.
机译:使用直流反应磁控溅射技术,在9×10〜(-5)-6×10〜(-4)mbar的不同氧分压下,将NiO-Cu复合薄膜成功沉积在Corning 7059玻璃基板上。所有沉积的膜均具有多晶性质,并显示出具有优先生长的立方结构。膜的透光率和带隙随着氧分压的增加而增加,直至2×10〜(-4)mbar,随着氧分压的增加而降低。根据表面形态学研究,在2×10〜(-4)mbar的氧分压下观察到细小且均匀的晶粒。组成分析表明,随着氧分压的增加,Ni含量增加,Cu含量减少。随着氧气压力增加到6×10〜(-4)mbar,电阻率值从64Ωcm逐渐减小到10Ωcm。

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