Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

S. Abhaya; G. Amarendra; S. Kalavathi; Padma Gopalan; M. Kamruddin; A.K. Tyagi; V.S. Sastry; C.S. Sundar

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Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

机译：X射线衍射和俄歇电子能谱研究Ni / Si薄膜体系中的硅化

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Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870 K with Ni_2Si, NiSi and NiSi_2 phases co-existing with Ni. Complete conversion of intermediate silicide phases to the final NiSi_2 phase takes place at 1170 K. Atomic force microscopy measurements have revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the evolution of various silicide phases is presented.

机译：使用掠入射X射线衍射（GIXRD）和俄歇电子能谱（AES）研究了在Ni / Si薄膜系统中由热退火引起的硅化物形成。硅化物的形成在870 K处发生，其中Ni_2Si，NiSi和NiSi_2相与Ni共存。中间硅化物相向最终NiSi_2相的完全转化发生在1170K。原子力显微镜测量显示，硅化后，柱状结构聚结为脊状结构。提出了根据各种硅化物相的演变对实验结果的比较。

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来源
《Applied Surface Science》 |2007年第8期|p.3799-3802|共4页
作者
S. Abhaya; G. Amarendra; S. Kalavathi; Padma Gopalan; M. Kamruddin; A.K. Tyagi; V.S. Sastry; C.S. Sundar;
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作者单位

Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
nickel silicides; X-ray diffraction; auger electron spectroscopy;

机译：硅化镍;X射线衍射;俄歇电子能谱;

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Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

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