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首页> 外文期刊>Applied Surface Science >Implanted ZnO thin films: Microstructure, electrical and electronic properties
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Implanted ZnO thin films: Microstructure, electrical and electronic properties

机译：植入的ZnO薄膜：微结构，电和电子性能

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摘要

Magnetron sputtered polycrystalline ZnO thin films were implanted using Al, Ag, Sn, Sb and codoped with TiN in order to improve the conductivity and to attempt to achieve p-type behaviour. Structural and electrical properties of the implanted ZnO thin films were examined with X-ray diffractometry (XRD), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and conductivity measurements. Depth profiles of the implanted elements varied with the implant species. Implantation causes a partial amorphisation of the crystalline structure and decreases the effective grain size of the films. One of the findings is the improvement, as a consequence of implantation, in the conductivity of initially poorly conductive samples. Heavy doping may help for the conversion of conduction type of ZnO thin films. Annealing in vacuum mitigated structural damage and stress caused by implantation, and improved the conductivity of the implanted ZnO thin films.
机译：使用Al，Ag，Sn，Sb注入磁控溅射多晶ZnO薄膜，并与TiN共掺杂，以提高电导率并尝试实现p型行为。用X射线衍射（XRD），扫描电子显微镜（SEM），二次离子质谱（SIMS），原子力显微镜（AFM）和电导率测量检查了所植入ZnO薄膜的结构和电性能。植入元件的深度轮廓随植入物种类而变化。注入导致晶体结构的部分非晶化并减小了膜的有效晶粒尺寸。研究结果之一是，由于植入，最初导电性较差的样品的导电性得到了改善。重掺杂可能有助于转换ZnO薄膜的导电类型。真空退火减轻了注入引起的结构损伤和应力，并改善了注入的ZnO薄膜的导电性。

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