Adsorption and thermal decomposition of C_(60) on Co/Si(111)-7 x 7

M.A.K. Zilani; H. Xu; Y.Y. Sun; X.-S. Wang; A.T.S. Wee

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Adsorption and thermal decomposition of C_(60) on Co/Si(111)-7 x 7

机译：C_（60）在Co / Si（111）-7 x 7上的吸附和热分解

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We present a study on the adsorption and thermal decomposition of C_(60) on Co covered Si(111)-7 x 7 using scanning tunneling microscopy and X-ray photoelectron spectroscopy. Co-induced magic clusters grown on Si(111)-7 x 7 are identified as a possible adsorption site where 51 ± 3% of C_(60) molecules adsorb at room temperature. On Co/Si(111)-7 x 7, C_(60) molecules start to decompose at 450℃, and are completely dissociated to form SiC by 720℃. This temperature is significantly lower than 910℃ at which C_(60) completely dissociates on clean Si(111)-7 x 7. This is a possible low temperature method for growing crystalline SiC films using C_(60) as a precursor molecule.

机译：我们目前使用扫描隧道显微镜和X射线光电子能谱研究C_（60）在Co覆盖的Si（111）-7 x 7上的吸附和热分解。在Si（111）-7 x 7上生长的共诱导魔术团簇被确定为可能的吸附位点，其中51±3％的C_（60）分子在室温下吸附。在Co / Si（111）-7 x 7上，C_（60）分子在450℃时开始分解，并在720℃时完全分解形成SiC。该温度大大低于C_（60）在干净的Si（111）-7 x 7上完全解离的910℃。这是使用C_（60）作为前体分子生长晶体SiC膜的一种可能的低温方法。

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来源
《Applied Surface Science》 |2007年第10期|p.4554-4559|共6页
作者
M.A.K. Zilani; H. Xu; Y.Y. Sun; X.-S. Wang; A.T.S. Wee;
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作者单位

Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Republic of Singapore;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
scanning tunneling microscopy; X-ray photoelectron spectroscopy; fullerenes; cobalt; silicon; silicon carbide; catalysis;

机译：扫描隧道显微镜;X射线光电子能谱;富勒烯;钴;硅;碳化硅;催化;

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Adsorption and thermal decomposition of C_(60) on Co/Si(111)-7 x 7

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