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首页> 外文期刊>Applied Surface Science >Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition
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Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

机译：真空和氧气环境下通过脉冲激光沉积在Si基片上生长的ZnO薄膜的特性

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摘要

Epitaxial ZnO thin films have been synthesized directly on Si(1 1 1) substrates by pulsed laser deposition (PLD) in vacuum. The reflection high-energy electron diffraction (RHEED) indicates that streaky patterns can be clearly observed from the ZnO epilayers prepared at 600 and 650℃, revealing a two-dimensional (2D) growth mode. While the ZnO thin film deposited in oxygen ambient shows ring RHEED pattern. There is a compressive in-plane stress existing in the ZnO epitaxial film, but a tensile one in the polycrystalline film. Compared with the ZnO epilayer, the ZnO polycrystalline film shows more intense ultraviolet emission (UVE) with a small full width at half maximum (FWHM) of 89 meV. It is suggested that the atomically flat epilayers may be powerfully used as transitive stratums to grow high-quality ZnO films suitable for the fabrication of optoelectronic devices.
机译：外延ZnO薄膜已通过真空中的脉冲激光沉积（PLD）直接在Si（1 1 1）衬底上合成。反射高能电子衍射（RHEED）表明，从在600和650℃下制备的ZnO外延层可以清晰地观察到条纹图案，揭示了二维（2D）生长模式。沉积在氧气环境中的ZnO薄膜显示出环RHEED图案。 ZnO外延膜中存在压缩面内应力，而多晶膜中存在拉伸面应力。与ZnO外延层相比，ZnO多晶膜表现出更强的紫外线发射（UVE），其半峰全宽（FWHM）小，为89 meV。建议将原子上平坦的外延层有效地用作过渡层，以生长适合制造光电器件的高质量ZnO薄膜。

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