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首页> 外文期刊>Applied Surface Science >Effects of Ge doping on the properties of Sb_2Te_3 phase-change thin films
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Effects of Ge doping on the properties of Sb_2Te_3 phase-change thin films

机译：锗掺杂对Sb_2Te_3相变薄膜性能的影响

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摘要

Ge-doped Sb_2Te_3 films were prepared by magnetron sputtering of Ge and Sb_2Te_3 targets on SiO_2/Si (1 0 0) substrates. The effect of Ge doping on the structure was studied in details by X-ray diffraction, differential scanning calorimetry, and X-ray photoelectron spectroscopy measurements. It is indicated that Ge atoms substitute for Sb/Te in lattice sites and form Ge-Te bonds, moreover, a metastable phase was observed in Ge-doped specimens. Both crystallization temperature and resistivity of amorphous Sb_2Te_3 increase after Ge doping, which are beneficial for improving room temperature stability of the amorphous state and reducing the SET current of chalcogenide random access memory.
机译：通过磁控溅射Ge和Sb_2Te_3靶材在SiO_2 / Si（1 0 0）衬底上制备了掺Ge的Sb_2Te_3薄膜。通过X射线衍射，差示扫描量热法和X射线光电子能谱测量，详细研究了Ge掺杂对结构的影响。结果表明，Ge原子在晶格位置取代了Sb / Te并形成Ge-Te键，而且在掺Ge的试样中观察到了亚稳相。掺杂Ge后，非晶Sb_2Te_3的晶化温度和电阻率均升高，有利于提高非晶态的室温稳定性，降低硫族化物随机存取存储器的SET电流。

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