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Characteristics Of Si-doped Sb_2te_3 Thin Films For Phase-change Random Access Memory

机译：相变随机存取存储器的掺Si Sb_2te_3薄膜的特性

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摘要

The characteristics of Si-doped Sb_2Te_3 thin films were investigated using differential scanning calorimetry (DSC), four-point probe technique, X-ray diffraction (XRD) analysis and high resolution transmission electron microscopy (HRTEM). It is found that the as-deposited Sb_2Te_3 film in our study is partly crystallized. Silicon doping increases the crystallization temperature and resistivity of Sb_2Te_3 film significantly. XRD and HRTEM analyses indicated that some of the doped Si atoms substitute for Sb or Te in the lattice, while others exists at the grain boundaries in the form of amorphous phase, which may be responsible for grain size reduction and high crystalline resistivity of Si-doped specimens. Compared with the conventional Ge_2Sb_2Te_5 film, Si-doped Sb_2Te_3 films exhibit lower melting temperature and higher crystalline resistivity, which is beneficial to RESET current reduction of phase-change random access memory (PRAM). These results show the feasibility of Si-doped Sb_2Te_3 films in PRAM application.
机译：利用差示扫描量热法（DSC），四点探针技术，X射线衍射（XRD）分析和高分辨率透射电子显微镜（HRTEM）研究了掺Si的Sb_2Te_3薄膜的特性。发现在我们的研究中，沉积的Sb_2Te_3薄膜部分结晶。硅掺杂显着提高了Sb_2Te_3薄膜的结晶温度和电阻率。 XRD和HRTEM分析表明，某些掺杂的Si原子替代了晶格中的Sb或Te，而另一些以非晶相形式存在于晶界，这可能导致Si-的晶粒尺寸减小和高结晶电阻率。掺杂的标本。与传统的Ge_2Sb_2Te_5薄膜相比，掺Si的Sb_2Te_3薄膜具有更低的熔化温度和更高的结晶电阻率，这有利于降低相变随机存取存储器（PRAM）的RESET电流。这些结果表明掺Si的Sb_2Te_3薄膜在PRAM应用中的可行性。

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