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PHASE-CHANGE MATERIAL, SPUTTER TARGET COMPRISING THE PHASE-CHANGE MATERIAL, METHOD OF FORMING PHASE-CHANGE LAYER USING THE SPUTTER TARGET AND METHOD OF MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY COMPRISING THE PHASE-CHANGE LAYER
PHASE-CHANGE MATERIAL, SPUTTER TARGET COMPRISING THE PHASE-CHANGE MATERIAL, METHOD OF FORMING PHASE-CHANGE LAYER USING THE SPUTTER TARGET AND METHOD OF MANUFACTURING PHASE-CHANGE RANDOM ACCESS MEMORY COMPRISING THE PHASE-CHANGE LAYER
The hase-change material, sputter target comprising the phase-change material, the method of forming phase-change layer using the sputter target and the method of manufacturing phase-change random access memory comprising the phase-change layer are provided to suppress the problems that are the doping concentration of C and the property and deposition rate of the phase-change layer change in the deposition production of the phase-change layer. The sputter target(100') which is equal with the structure is positioned at the upside of the substrate(200) in the vacuum chamber(500). The sputtering process is performed on the sputter target with the predetermined ion. The atom(3) of the phase change material and C(carbon) atom(6) are emitted and is deposited in the top of the substrate by the sputtering of the sputter target. If the process of forming the phase-change layer(30) is completed, the process of depositing the phase-change layer is repeatedly performs on other substrates.
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