首页> 外国专利> Method of manufacturing a thin film structure, method of manufacturing a storage node using the same, method of manufacturing a phase change random access memory using the same and a thin film structure, a storage node and a phase change random access memory formed using the same

Method of manufacturing a thin film structure, method of manufacturing a storage node using the same, method of manufacturing a phase change random access memory using the same and a thin film structure, a storage node and a phase change random access memory formed using the same

机译：制造薄膜结构的方法，使用该薄膜结构的存储节点的方法，使用该薄膜结构的相变随机存取存储器的制造方法，使用该薄膜结构的相变随机存取存储器的存储节点

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摘要

Provided are a method of manufacturing a thin film structure, a method of manufacturing a storage node having the same, a method of manufacturing a phase-change random access memory device having the same and a thin film structure, storage node and phase-change random access memory device formed using the same. The method of manufacturing the thin film structure may include the operations of obtaining a seed layer formed of a chalcogenide alloy, by supplying one or two selected from the group consisting of a Group IV-precursor, a Group V-precursor, and a Group VI-precursor to an upper surface of an amorphous material layer, and forming the thin film by supplying a Group IV-precursor, a Group V-precursor, and a Group VI-precursor to an upper surface of the seed layer.

机译：提供了一种制造薄膜结构的方法，一种制造具有该结构的存储节点的方法，一种制造具有该结构的相变随机存取存储器的方法以及一种薄膜结构，存储节点和相变随机的方法。使用该存储器形成的访问存储设备。制造薄膜结构的方法可以包括以下操作：通过提供选自IV族前体，V族前体和VI族中的一种或两种，获得由硫族化物合金形成的种子层。 -前体到非晶材料层的上表面，并且通过向种子层的上表面提供IV族前体，V族前体和VI族前体形成薄膜。

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公开/公告号US2008050892A1

专利类型
公开/公告日2008-02-28

原文格式PDF
申请/专利权人 WOONG-CHUL SHIN;YOUN-SEON KANG;
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申请/专利号US20070723103
发明设计人 WOONG-CHUL SHIN;YOUN-SEON KANG;
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申请日2007-03-16
分类号H01L21/20;H01L21/36;
国家 US
入库时间 2022-08-21 20:12:02

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