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首页> 外文期刊>Applied Surface Science >Surface morphology characterization of pentacene thin film and its substrate with under-layers by power spectral density using fast Fourier transform algorithms
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Surface morphology characterization of pentacene thin film and its substrate with under-layers by power spectral density using fast Fourier transform algorithms

机译：快速傅立叶变换算法通过功率谱密度表征并五苯薄膜及其具有底层的衬底的表面形态

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摘要

Surface morphology of pentacene thin films and their substrates with under-layers is characterized by using atomic force microscopy (AFM). The power values of power spectral density (PSD) for the AFM digital data were determined by the fast Fourier transform (FFT) algorithms instead of the root-mean-square (rms) and peak-to-valley value. The PSD plots of pentacene films on glass substrate are successfully approximated by the k-correlation model. The pentacene film growth is interpreted the intermediation of the bulk and surface diffusion by parameter C of k-correlation model. The PSD plots of pentacene film on Au under-layer is approximated by using the linear continuum model (LCM) instead of the combination model of the k-correlation model and Gaussian function. The PSD plots of SiO_2 layer on Au under-layer as a gate insulator on a gate electrode of organic thin film transistors (OTFTs) have three power values of PSD. It is interpreted that the specific three PSD power values are caused by the planarization of the smooth SiO_2 layer to rough Au under-layer.
机译：并五苯薄膜及其具有底层的基底的表面形态通过原子力显微镜（AFM）表征。 AFM数字数据的功率谱密度（PSD）的功率值是通过快速傅里叶变换（FFT）算法确定的，而不是均方根（rms）和峰谷值。通过k-相关模型成功地估计了玻璃基板上并五苯薄膜的PSD图。并五苯薄膜的生长通过k-相关模型的参数C来解释本体和表面扩散的中介。通过使用线性连续体模型（LCM）代替k相关模型和高斯函数的组合模型，可以估算Au下层上并五苯薄膜的PSD图。在有机薄膜晶体管（OTFT）的栅电极上作为栅极绝缘层的Au底层上的SiO_2层的PSD图具有三个功率值PSD。可以解释为特定的三个PSD功率值是由光滑SiO_2层到粗糙的Au底层的平坦化引起的。

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