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Pulsed laser deposition of Co-based Tailored-Heusler alloys

机译:钴基量身定制的Heusler合金的脉冲激光沉积

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摘要

Thin films of nonstoichiometric Heusler alloys Co_2MnSb_xSn_(1-x) (x = 0.2; 0.4; 0.6; 0.8) have been grown by pulsed laser deposition (double-target/double beam configuration) on Si (1 0 0) substrates using a KrF excimer laser (λ = 248 nm, τ = 20 ns). The substrate temperature was held at 300 K in all experiments to prevent interface interdiffusion of the species. A comparison between the compositions of films and corresponding targets has been done through energy dispersive X-ray spectroscopy (EDS) analysis showing a very satisfactory match. Scanning electron microscopy (SEM) imaging served to investigate the morphology of the films in order to determine the size and density of droplets which may influence the optical data. Optical conductivity derived from reflectivity measurements shows absorption onsets close to 1 eV, which corresponds to the onset of valence-to-conduction transitions in the minority spin bands theoretically predicted. The values of the saturation magnetisation measured at 300 K on the quaternary alloys are very close to those of ternary ones for which either half-metallic properties or high spin polarisation were theoretically predicted.
机译:非化学计量的Heusler合金Co_2MnSb_xSn_(1-x)(x = 0.2; 0.4; 0.6; 0.8)的薄膜已经通过使用KrF的Si(1 0 0)衬底上的脉冲激光沉积(双靶/双光束配置)生长。准分子激光器(λ= 248 nm,τ= 20 ns)。在所有实验中,底物温度均保持在300 K,以防止物质之间的界面相互扩散。通过能量色散X射线光谱(EDS)分析已经完成了薄膜成分与相应靶材之间的比较,显示出非常令人满意的匹配效果。扫描电子显微镜(SEM)成像用于研究薄膜的形态,以确定可能影响光学数据的液滴的大小和密度。从反射率测量得出的光导率显示出吸收起始点接近1 eV,这对应于理论上预测的少数自旋带中的价态到导电态跃迁的起点。四元合金在300 K下测得的饱和磁化强度值非常接近于三元合金,从理论上可以预测其半金属性能或高自旋极化强度。

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