首页> 外国专利> METHOD FOR FORMING SALICIDE USING A PULSED LASER DEPOSITION AND A PULSED LASER DEPOSITION APPARATUS FOR THE SAME, CAPABLE OF OBTAINING A SUPERIOR QUALITY OF THE SALICIDE

METHOD FOR FORMING SALICIDE USING A PULSED LASER DEPOSITION AND A PULSED LASER DEPOSITION APPARATUS FOR THE SAME, CAPABLE OF OBTAINING A SUPERIOR QUALITY OF THE SALICIDE

机译：使用脉冲激光沉积和相同的脉冲激光沉积装置形成硅化物的方法，能够获得较高质量的硅化物

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PURPOSE: A method for forming salicide using a pulsed laser deposition and a pulsed laser deposition apparatus for the same are provided to reduce contaminants including particles by omitting a barrier metal deposition process and a removing process.;CONSTITUTION: A gate electrode, a spacer and a source/drain region are formed on a semiconductor substrate(S20). The contact hole of the gate electrode, the spacer and the source/drain is formed by a photographic process and an etching process(S21). A pre-amorphization-implant is enforced within the contact hole(S22). A wet-cleaning is enforced in order to remove natural oxide(S23). A thin film for forming salicide using a pulsed laser deposition(S24). The salicide is formed by laser annealing(S25).;COPYRIGHT KIPO 2010

机译：目的：提供一种使用脉冲激光沉积形成自对准硅化物的方法和一种脉冲激光沉积设备，以通过省略阻挡金属沉积工艺和去除工艺来减少包括颗粒在内的污染物。组成：栅电极，隔离物和在半导体衬底上形成源/漏区（S20）。通过照相工艺和蚀刻工艺形成栅电极，隔离物和源极/漏极的接触孔（S21）。在接触孔内实施预非晶化植入（S22）。为了除去天然氧化物，进行湿法清洁（S23）。使用脉冲激光沉积形成自对准硅化物的薄膜（S24）。硅化物通过激光退火形成（S25）。; COPYRIGHT KIPO 2010

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公开/公告号KR20100027533A

专利类型
公开/公告日2010-03-11

原文格式PDF
申请/专利权人 DONGBU HITEK CO. LTD.;
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申请/专利号KR20080086477
发明设计人 OH SEOK JOON;
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申请日2008-09-02
分类号H01L21/24;H01L21/268;H01L21/20;
国家 KR
入库时间 2022-08-21 18:33:12

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