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首页> 外文期刊>Applied Surface Science >Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC
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Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC

机译：对SiC上的AlGaN / GaN晶体管中的通孔进行UV激光微钻而导致的材料改性分析

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摘要

Pulsed UV laser drilling can be applied to fabricate vertical electrical interconnects (vias) for AlGaN/GaN high electron mobility transistor devices on single-crystalline silicon carbide (SiC) substrate. Through-wafer micro holes with a diameter of 50-100 μm were formed in 400 μm thick bulk 4H-SiC by a frequency-tripled solid-state laser (355 nm) with a pulse width of ≤ 30 ns and a focal spot size of ～15 μm. The impact of laser machining on the material system in the vicinity of micro holes was investigated by means of micro-Raman spectroscopy and transmission electron microscopy. After removing the loosely deposited debris by etching in buffered hydrofluoric acid, a layer of < 4 μm resolidified material remains at the side walls of the holes. The thickness of the resolidified layer depends on the vertical distance to the hole entry as observed by scanning electron microscopy. Micro-Raman spectra indicate a change of internal strain due to laser drilling and evidence the formation of nanocrystalline silicon (Si). Microstructure analysis of the vias' side walls using cross sectional TEM reveals altered degree of crystallinity in SiC. Layers of heavily disturbed SiC, and nanocrystalline Si are formed by laser irradiation. The layers are separated by 50-100 nm thick interface regions. No evidence of extended defects, micro cracking or crystal damage was found beneath the resolidified layer. The precision of UV laser micro ablation of SiC using nanosecond pulses is not limited by laser-induced extended crystal defects.
机译：可以将脉冲UV激光钻孔应用于在单晶碳化硅（SiC）基板上制造用于AlGaN / GaN高电子迁移率晶体管器件的垂直电互连（通孔）。直径为50-100μm的晶圆通孔，是通过频率三倍的固态激光器（355 nm）在400μm厚的块状4H-SiC中形成的，脉冲宽度≤30 ns，焦点尺寸为〜15μm。通过显微拉曼光谱和透射电子显微镜研究了激光加工对微孔附近材料系统的影响。通过在缓冲的氢氟酸中蚀刻除去松散沉积的碎屑后，在孔的侧壁保留了<4μm的固化材料层。再凝固层的厚度取决于通过扫描电子显微镜观察到的到孔入口的垂直距离。显微拉曼光谱表明由于激光钻孔而引起的内部应变的变化，并证明了纳米晶硅（Si）的形成。使用横截面TEM对通孔侧壁进行微结构分析，发现SiC的结晶度发生了变化。通过激光照射形成受严重扰动的SiC和纳米晶Si的层。这些层被50-100nm厚的界面区域分开。在再固化层下未发现延伸缺陷，微裂纹或晶体损坏的迹象。使用纳秒脉冲对SiC进行UV激光微烧蚀的精度不受激光诱导的扩展晶体缺陷的限制。

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