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首页> 外文期刊>Applied Surface Science >Influence of N_2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering
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Influence of N_2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering

机译：N_2流量比对直流磁控溅射制备氮化ha薄膜性能的影响

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摘要

Hafnium nitride (Hf-N) thin films were deposited on fused silica at different N_2 flow ratio (N_2/N_2 + Ar) using a reactive DC magnetron sputtering system. A gradual evolution in the composition of the films from Hf_3N_2, HfN, to higher nitrides was found through X-ray diffraction (XRD). Films of Hf_3N_2 and HfN show positive temperature coefficients of resistivity, while higher nitride has a negative one. Highly oriented growth of (0 0 1) Hf_3N_2 and NaCl-structure (1 0 0) HfN films were fabricated on fused silica substrate at relatively lower temperature of 300 ℃. The electrical resistivity values of both as-deposited and post-deposition annealed films were measured by a four-point probe method. The obtained minimum resistivity of as-deposited film is 20 μΩ cm, and this result shows potential application of HfN films as electrode materials in electronic devices.
机译：使用反应性直流磁控溅射系统，以不同的N_2流量比（N_2 / N_2 + Ar）在氮化硅上沉积氮化f（Hf-N）薄膜。通过X射线衍射（XRD）发现薄膜的组成从Hf_3N_2，HfN逐渐演化为高级氮化物。 Hf_3N_2和HfN膜的电阻率温度系数为正，而高氮化物的膜则为负。在较低的300℃温度下，在熔融石英衬底上制备了（0 0 1）Hf_3N_2和NaCl结构（1 0 0）的高取向生长HfN薄膜。通过四点探针法测量沉积后和沉积后退火膜的电阻率值。所获得的沉积膜的最小电阻率为20μΩcm，该结果表明HfN膜作为电极材料在电子设备中的潜在应用。

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