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Atomically Precise Self-assembly Of One-dimensional structures On Silicon

机译:硅上一维结构的原子精确自组装

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This work has three main themes: (1) fabricate atomicaliy precise nanostructures at surfaces, particularly nanowires consisting of atom chains; (2) explore the behavior of one-dimensional electrons in atomic chains; (3) find the fundamental limits of data storage using an atomic scale memory. Semiconductor surfaces lend themselves towards self-assembly, because the broken covalent bonds create elaborate reconstruction patterns to minimize the surface energy. An example is the large 7×7 unit cell on Si(111), which can be used as building block. On semiconductors, the surface electrons completely de-couple from the substrate, as long as their energy lies in the band gap. Angle-resolved photoemission reveals surprising features, such as a fractional band filling and a spin-splitting at a non-magnetic surface. An interesting by-product is a memory structure with self-assembled tracks that are five atom rows wide and store a bit by the presence or absence of a single silicon atom. This toy memory is used to test the fundamental limits of data storage and to see how storage on silicon compares to storage in DNA.
机译:这项工作有三个主要主题:(1)在表面上制造原子精确的纳米结构,特别是由原子链组成的纳米线; (2)探索原子链中一维电子的行为; (3)找到使用原子尺度存储器进行数据存储的基本限制。半导体表面倾向于自组装,因为断裂的共价键会形成精细的重构图案,从而使表面能最小化。一个示例是Si(111)上的7×7大型单元,可以用作构造块。在半导体上,只要表面电子的能量位于带隙中,它们就会完全与衬底解耦。角度分辨的光发射显示出令人惊讶的特征,例如分数带填充和非磁性表面的自旋分裂。一个有趣的副产品是具有自组装磁道的存储结构,该磁道宽为五个原子行,并通过存在或不存在单个硅原子来存储一点。该玩具存储器用于测试数据存储的基本限制,并了解硅上的存储与DNA中的存储相比。

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