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首页> 外文期刊>Applied Surface Science >Nanoscale Observations Of The Operational Failure For phase-change-type Nonvolatile Memory Devices Using ge_2sb_2te_5 Chalcogenide Thin Films
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Nanoscale Observations Of The Operational Failure For phase-change-type Nonvolatile Memory Devices Using ge_2sb_2te_5 Chalcogenide Thin Films

机译：使用ge_2sb_2te_5硫族化物薄膜的相变型非易失性存储设备操作失败的纳米尺度观察

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摘要

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge_2Sb_2Te_5 (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 μm. After the programming signals of more than 2 × 10~6 cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1 × 10~(10) cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming.
机译：在这项研究中，制造了相变存储器件，并使用透射电子显微镜（TEM）和能量色散X射线光谱（EDS）检验了器件故障模式的起源。 Ge_2Sb_2Te_5（GST）被用作存储器件中的活性相变材料，并且活性孔径设计为0.5μm。在将超过2×10〜6个周期的编程信号重复施加到器件后，高电阻存储状态（复位）无法被重写，并且单元电阻被固定在低电阻状态（设置）。根据TEM和EDS研究，器件工作区域中的Sb过量和Ge缺乏对器件的可靠性有很大影响，特别是在要求耐久的条件下。在器件工作区域和非活动外围区域之间的区域中也观察到了异常的Ge偏析和氧化。为了保证PRAM的数据耐久性超过1×10〜（10）个周期，开发具有更稳定成分的相变材料并减少编程所需的电流非常重要。

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