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Silicon-based Thin Films As Bottom Electrodes In Chalcogenide nonvolatile Memories

机译：硅基薄膜作为硫族化物非易失性存储器中的底电极

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摘要

The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.
机译：研究了硅锗（SiGe）薄膜的电阻率对GeSbTe（GST）硫属化物合金中相变的影响以及以SiGe膜为底部电极的硫属化物存储器件的制造工艺。当使用原位掺杂技术形成p型SiGe底部电极时，可以用不同的方式制造n型电极，其中磷原子从高掺杂硅底层扩散到未掺杂SiGe膜。在p型GST和n型SiGe层之间没有形成p-n异质结，并且半导体类型的SiGe合金不影响存储器件的切换。可以确认，尽管焦耳加热与电阻率成正比，但仍存在用于存储操作的最佳电阻率值。 SiGe膜的极高电阻率对复位电流的降低没有影响，这可能是由于高温下SiGe合金的电阻降低所致。

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