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首页> 外文期刊>Applied Surface Science >Influence Of The Plasma Parameters And Nitrogen Addition on The Electrical Characteristics Of Dlc Films Deposited by Inductively Coupled Plasma Deposition
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Influence Of The Plasma Parameters And Nitrogen Addition on The Electrical Characteristics Of Dlc Films Deposited by Inductively Coupled Plasma Deposition

机译：等离子体参数和氮添加量对电感耦合等离子体沉积Dlc薄膜电学特性的影响

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This work has been based on studies of the plasma parameters influence and nitrogen addition over on the electrical characteristics of diamond-like carbon (DLC) films deposited by inductively coupled plasma deposition (ICP) system. For these studies, it was used a mixture of methane with different flows of nitrogen, two different pressure processes and three different coil powers. The nitrogenated DLC films, had presented a great variation in their electric and structural properties with the nitrogen variation in the plasma. With the nitrogen addition, an increase in its dielectric constant of 1.7-7.4 to concentration of the 40% of the nitrogen has occurred. For high nitrogen concentrations (80% of nitrogen), the dielectric constant decreases (of 7.4 for 5.0). The resistivity of the films decreases with the nitrogen concentration increase (1.2 × 10~3 Ω cm). Attributing semiconductors characteristics to DLC films. With the increase of nitrogen concentration, the sp~3 hybridization increases, too. These characteristics were excellent for innumerable applications in electronic devices.
机译：这项工作是基于对等离子体参数影响和氮添加对电感耦合等离子体沉积（ICP）系统沉积的类金刚石碳（DLC）膜的电特性的研究的基础上进行的。在这些研究中，使用了具有不同氮气流量，两种不同压力过程和三种不同线圈功率的甲烷混合物。氮化的DLC膜的电和结构性能随​​等离子体中氮的变化而变化很大。随着氮的添加，其介电常数增加了1.7-7.4，达到了40％的氮浓度。对于高氮浓度（氮的80％），介电常数会降低（5.0时为7.4）。膜的电阻率随着氮浓度的增加而降低（1.2×10〜3Ωcm）。将半导体特性归因于DLC膜。随着氮浓度的增加，sp〜3杂交也增加。这些特性非常适合电子设备中的无数应用。

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