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Round-robin study of arsenic implant dose measurement in silicon by SIMS

机译：通过SIMS循环研究硅中砷注入剂量的研究

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An international round-robin study was undertaken under the auspices of ISO TC201/SC6 to determine the best analytical conditions and the level of interlaboratory agreement for the determination of the implantation dose of arsenic in silicon by secondary ion mass spectrometry (SIMS). Fifteen SIMS laboratories, as well as two laboratories that performed low energy electron-induced X-ray emission spectrometry (LEXES) and one that made measurements by instrumental neutron activation analysis (INAA) were asked to determine the implanted arsenic doses in three unknown samples using as a comparator NIST Standard Reference Material((R)) 2134. The use of a common reference material by all laboratories resulted in better interlaboratory agreement than was seen in a previous round-robin that lacked a common comparator. The relative standard deviation among laboratories was less than 4% for the medium-dose sample, but several percent larger for the low- and high-dose samples. The high-dose sample showed a significant difference between point-by-point and average matrix normalization because the matrix signal decreased in the vicinity of the implant peak, as observed in a previous study. The dose from point-by-point normalization was in close agreement with that determined by INAA. No clear difference in measurement repeatability was seen when comparing Si-2(-) and Si-3(-) as matrix references with AsSi-. (c) 2006 Elsevier B.V. All rights reserved.
机译：在ISO TC201 / SC6的主持下进行了一项国际循环研究，以确定最佳的分析条件和实验室间协议的水平，以便通过二次离子质谱（SIMS）测定硅中砷的注入剂量。要求15个SIMS实验室以及2个执行低能电子诱导X射线发射光谱（LEXES）的实验室和1个通过仪器中子活化分析（INAA）进行测量的实验室，以确定使用以下方法在三个未知样品中注入的砷剂量作为比较者，NIST Standard Reference Material（R）2134。与之前缺乏共同比较者的轮询相比，所有实验室使用共同的参考物质产生了更好的实验室间一致性。中等剂量样品的实验室之间的相对标准偏差小于4％，而低剂量和高剂量样品的实验室之间的相对标准偏差大几个百分点。高剂量样品在逐点校准和平均基质归一化之间显示出显着差异，因为在先前研究中观察到，基质信号在植入物峰附近降低。逐点标准化的剂量与INAA确定的剂量非常吻合。将作为基质参考的Si-2（-）和Si-3（-）与AsSi-进行比较时，在测量可重复性上没有发现明显差异。 （c）2006 Elsevier B.V.保留所有权利。

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