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首页> 外文期刊>Applied Surface Science >Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering
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Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering

机译：反应射频磁控溅射从氮化锌靶在石英基板上制备的氮化锌膜的光学带隙

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摘要

Polycrystalline zinc nitride films have been synthesized onto quartz substrates from the zinc nitride target and the nitrogen working gas by reactive rf magnetron sputtering at room temperature. X-ray diffraction study indicates that polycrystalline zinc nitride films are of cubic structure with the lattice constant a = 0.979(1) nm and have preferred orientations with (3 2 1) and (4 4 2). Its absorption coefficients as well as the film thickness are calculated from the transmission spectra, which are measured with a double beam spectrophotometer. The optical band gap has been determined from the photon energy dependence of absorption coefficient, an indirect transition optical band gap of 2.12(3) eV has been obtained. (c) 2005 Elsevier B.V. All rights reserved.
机译：在室温下，通过反应性射频磁控溅射从氮化锌靶和氮工作气体在石英衬底上合成了多晶氮化锌膜。 X射线衍射研究表明，多晶氮化锌膜为立方结构，晶格常数为a = 0.979（1）nm，并具有（3 2 1）和（4 4 2）的优选取向。它的吸收系数和膜厚是由透射光谱计算的，该透射光谱是用双光束分光光度计测量的。根据吸收系数的光子能量依赖性确定了光学带隙，获得了2.12（3）eV的间接跃迁光学带隙。 （c）2005 Elsevier B.V.保留所有权利。

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