PROBLEM TO BE SOLVED: To provide a sphalerite type nitride semiconductor self-supporting substrate from which green monochrome emission is obtained and to provide a light-emitting device using the sphalerite type nitride semiconductor self-supporting substrate.;SOLUTION: An SiO2 protective layer 20 is grown on the rear face of a GaAs substrate 10 having a (001) plane and an about 10 nm GaN buffer layer 12 is grown on the surface. After annealing, a 1,800 nm GaN layer 14 is grown on the GaN buffer layer 12. Then after a GaN layer 16 having a prescribed film thickness is grown on the GaN layer 14 by an HVPE method, the self-supporting substrate is formed by removing the GaAs substrate 10 and the GaN buffer layer 12 of a growth substrate 1 by polishing and etching or the like. A ratio of a wurtzite structure on the surface of the GaN layer 14 is reduced to 5% when a thickness of the GaN layer 16 is 200 μm and reduced to 1.5% when the thickness of the GaN layer 16 is 500 μm. The light-emitting device having good luminescence monochromaticity can be manufactured by using these sphalerite type nitride semiconductor self-supporting substrates.;COPYRIGHT: (C)2009,JPO&INPIT
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