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首页> 外文期刊>Applied Surface Science >An in situ transport measurement of interfaces between SrTiO3(100) surface and an amorphous wide-gap insulator
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An in situ transport measurement of interfaces between SrTiO3(100) surface and an amorphous wide-gap insulator

机译：SrTiO3（100）表面与非晶宽带隙绝缘子之间界面的原位传输测量

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摘要

We have explored the transport properties of the interface between a SrTiO3(1 0 0) single crystal and a CaHfO3 wide-gap insulator layer deposited by pulsed laser deposition. The electrical transport measurements were done in situ during the heterojunction fabrication and consistently showed an enhancement of interface conductivity. A conducting interface was always obtained, independent of deposition parameters (laser pulse rate, laser fluence, oxygen pressure, and substrate termination). The conduction was attributed to plume-induced photocurrent in SrTiO3. The current decay rate after insulator film fabrication was strongly influenced by substrate termination. An exponential relaxation-type photocurrent decay was clearly seen on SrO-termination, whereas a nearly constant conductivity was seen for up to 24 h on TiO2-ternunated surfaces. (c) 2005 Elsevier B.V. All rights reserved.
机译：我们已经探索了SrTiO3（1 0 0）单晶与通过脉冲激光沉积沉积的CaHfO3宽间隙绝缘体层之间的界面的传输性质。电传输测量是在异质结制造过程中就地完成的，并始终显示出界面电导率的提高。始终可以获得导电界面，而与沉积参数（激光脉冲速率，激光注量，氧气压力和基材终止）无关。该传导归因于SrTiO3中羽流诱导的光电流。绝缘膜制造后的电流衰减率受衬底端接的强烈影响。在SrO端接处可以清楚地看到指数松弛型光电流衰减，而在TiO2杂化的表面上，长达24小时的电导率几乎保持恒定。 （c）2005 Elsevier B.V.保留所有权利。

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