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首页> 外文期刊>IEEE Transactions on Electron Devices >Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs
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Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs

机译：用于（100）表面定向大直径晶圆的原子平坦硅表面和硅/绝缘体界面形成技术，引入了高性能和低噪声的金属-绝缘体-硅FET

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摘要

Technology to atomically flatten the silicon surface on (100) orientation large-diameter wafer and the formation technology of an atomically flat insulator film/silicon interface are developed in this paper. Atomically flat silicon surfaces composed of atomic terraces and steps are obtained on (100) orientation 200-mm-diameter wafers by annealing in pure argon ambience at 1200 $^{circ}hbox{C}$ for 30 min. Atomically flat surfaces with various terrace widths and step structures are observed by atomic force microscopy. It is found that the atomic terrace width changes widely with an off angle of the wafer surface from the (100) lattice plane. It is also found that the direction of the off angle significantly affects the atomically flat surface morphology, i.e., when the directions of the off angles are parallel to the $langlehbox{110}rangle$ directions, the step structure is composed of alternating pairs of straight and triangular steps. When the directions of the off angles are parallel to the $langlehbox{100}rangle$ directions, the step structure is composed of only straight steps. By precise control of the off angle and the direction toward the $langlehbox{100}rangle$ directions for a 200-mm-diameter silicon wafer, we have succeeded in fabricating an atomically flat surface with straight atomic steps and a very uniform terrace width of 140–150 nm on the entire surface of a large-diameter silicon wafer. Furthermore, it is found that only radical-reaction-based insulator film formation technology, such as oxidation utilizing oxygen radicals carried out at a low temperature (400 $^{circ}hbox{C}$ ), preserves the ato-n-nmic flatness of the insulator film/silicon interface. Finally, when MOSFETs are fabricated with an atomically flat interface, they exhibit near ideal subthreshold swing factors, with much smaller fluctuation, extremely lower $1/f$ noise, and higher MOS dielectric breakdown field intensity compared with MOSFETs fabricated with conventional technologies.
机译：本文开发了原子平坦化（100）取向大直径晶片上硅表面的技术以及原子平坦的绝缘膜/硅界面的形成技术。通过在纯氩气氛中在1200 $ hbox {C} $下退火30分钟，在（100）取向200毫米直径的晶片上获得由原子台阶和台阶组成的原子平坦的硅表面。通过原子力显微镜观察到具有各种平台宽度和阶梯结构的原子平坦表面。发现原子台阶宽度随着晶片表面相对于（100）晶格平面的偏离角而变化很大。还发现偏角的方向显着影响原子平面表面的形态，即，当偏角的方向平行于$ langlehbox {110} rangle $方向时，台阶结构由交替的成对结构组成。直线和三角形台阶。当偏角方向平行于$ langlehbox {100} rangle $方向时，台阶结构仅由直线台阶组成。通过精确控制直径为200 mm的硅晶片的偏角和朝向$ langlehbox {100} rangle $的方向，我们成功地制造了原子级平坦的表面，该表面具有直的原子台阶和非常均匀的平台宽度在大直径硅晶片的整个表面上为140–150 nm。此外，发现仅基于自由基反应的绝缘体膜形成技术，例如利用在低温下（400 $ ^ hbox {C} $）进行的氧自由基的氧化，可以保留原子-n-nmic绝缘膜/硅界面的平整度。最后，与传统技术制造的MOSFET相比，当制造具有原子平面界面的MOSFET时，它们表现出接近理想的亚阈值摆幅因数，波动小得多，$ 1 / f $噪声极低，并且MOS介质击穿场强更高。

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