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首页> 外文期刊>Japanese journal of applied physics >Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator
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Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

机译：绝缘体上薄硅离子注入（100）取向硅表面上外延生长的平坦表面的形成技术

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摘要

For the development of three-dimensional devices, selective epitaxial growth (SEG) technology has attracted much attention. SEG has been applied to fabricate many devices and it is expected to be used in future manufacturing processes. Therefore, its characteristics must be examined in detail to extend its application. For the fabrication of a three-dimensional device structure, the selectivity of epitaxial growth must be accurately controlled not only on Si and SiO2, but also on different impurity-type silicon surfaces. In this work, we investigated some characteristics of the SEG process, especially focusing on the surface roughness after SEG. Both vapor phase epitaxy (VPE) and solid phase epitaxy (SPE) were performed on ion-implanted silicon-on-insulator (SOI) thin wafers. It was often reported that epitaxial growth is very sensitive to the crystal condition of the substrate on which the films are deposited. However, we first revealed that the impurity type (p- or n-type) and its concentration at the substrate surface markedly changed the roughness and incubation times of the deposition. From our results, SPE with the oxide cap layer formation is effective for maintaining almost the same flatness as the original wafer surface. It is also effective to employ the low-temperature H-2/Xe plasma treatment after the SEG to reduce roughness. (C) 2017 The Japan Society of Applied Physics
机译：对于三维器件的开发，选择性外延生长（SEG）技术引起了很多关注。 SEG已被用于制造许多器件，并且有望在未来的制造过程中使用。因此，必须详细检查其特性以扩展其应用范围。为了制造三维器件结构，不仅必须在Si和SiO2上，而且还必须在不同杂质类型的硅表面上精确地控制外延生长的选择性。在这项工作中，我们研究了SEG工艺的一些特征，特别是关注SEG之后的表面粗糙度。气相外延（VPE）和固相外延（SPE）均在离子注入绝缘体上硅（SOI）薄晶圆上进行。经常有报道说，外延生长对淀积薄膜的衬底的晶体条件非常敏感。但是，我们首先发现，杂质类型（p型或n型）及其在基板表面的浓度显着改变了沉积的粗糙度和孵育时间。根据我们的结果，形成氧化物覆盖层的SPE可有效保持与原始晶圆表面几乎相同的平坦度。在SEG之后进行低温H-2 / Xe等离子体处理以降低粗糙度也是有效的。 （C）2017日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2017年第10期|105503.1-105503.8|共8页
  • 作者

    Furukawa Kiichi; Teramoto Akinobu; Kuroda Rihito; Suwa Tomoyuki; Hashimoto Keiichi; Sugawa Shigetoshi; Suzuki Daisuke; Chiba Yoichiro; Ishii Katsutoshi; Shimizu Akira; Hasebe Kazuhide;

  • 作者单位

    Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan;

    Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan;

    Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan;

    Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan;

    Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan;

    Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan|Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan;

    Tokyo Electron Technol Solut Ltd, Yamanashi Reg Off, Nirasaki, Yamanashi 4070192, Japan;

    Tokyo Electron Technol Solut Ltd, Yamanashi Reg Off, Nirasaki, Yamanashi 4070192, Japan;

    Tokyo Electron Technol Solut Ltd, Yamanashi Reg Off, Nirasaki, Yamanashi 4070192, Japan;

    Tokyo Electron Technol Solut Ltd, Yamanashi Reg Off, Nirasaki, Yamanashi 4070192, Japan;

    Tokyo Electron Technol Solut Ltd, Yamanashi Reg Off, Nirasaki, Yamanashi 4070192, Japan;

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