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首页> 外文期刊>Applied Surface Science >The use of angle resolved XPS to measure the fractional coverage of high-kappa dielectric materials on silicon and silicon dioxide surfaces
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The use of angle resolved XPS to measure the fractional coverage of high-kappa dielectric materials on silicon and silicon dioxide surfaces

机译：使用角度分辨XPS来测量高k介电材料在硅和二氧化硅表面上的部分覆盖率

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摘要

Angle resolved XPS (ARXPS) is a powerful tool for the determination of the thickness of ultra-thin films. In the case of high-k dielectric layers, the technique is capable of measuring the thickness of both the high-k layer and intermediate layers of silicon dioxide or metal silicate. The values for layer thickness are in close agreement with those generated by a variety of other techniques. As well as knowing the thickness of these layers, it is important to determine whether the layers are continuous or whether the coverage of the high-k layer is only partial. Using ARXPS, a method has been developed to determine whether the coverage of the high-k material is continuous and, if not, to calculate the fraction of the surface that is covered. The method is described with reference to the layers of Al2O3 grown on SiO2 using atomic layer deposition (ALD). The method is then applied to HfO2 layers produced using ALD on silicon wafers whose surfaces had received three different types of surface treatment. The way in which the layers grow and the nature of the resulting layer were found to depend upon the pre-treatment method. For example, growth on a thermal silicon dioxide surface resulted in complete coverage of HfO2 after fewer ALD cycles than layers grown on an H-terminated surface. The results from ARXPS are compared with those obtained from ToF SIMS that have been shown earlier to be a valuable alternative to the LEIS analysis [1]. (c) 2005 Elsevier B.V. All rights reserved.
机译：角度分辨XPS（ARXPS）是确定超薄膜厚度的有力工具。在高k介电层的情况下，该技术能够测量二氧化硅或金属硅酸盐的高k层和中间层的厚度。层厚度的值与各种其他技术产生的值非常一致。在知道这些层的厚度的同时，重要的是确定这些层是连续的还是高k层的覆盖范围是否只是部分覆盖。使用ARXPS，已经开发出一种方法来确定高k材料的覆盖范围是否连续，如果不连续，则可以计算被覆盖表面的分数。参考使用原子层沉积（ALD）在SiO2上生长的Al2O3层描述了该方法。然后将该方法应用于在硅晶片上使用ALD生产的HfO2层，该硅晶片的表面已接受三种不同类型的表面处理。发现层的生长方式和所得层的性质取决于预处理方法。例如，在热二氧化硅表面上的生长导致比在H末端表面上生长的层更少的ALD循环后，HfO2被完全覆盖。将ARXPS的结果与从ToF SIMS获得的结果进行比较，后者已被证明是LEIS分析的有价值的替代方法[1]。 （c）2005 Elsevier B.V.保留所有权利。

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