Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging

Mikulik P; Lubbert D; Pernot P; Helfen L; Baumbach T

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Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging

机译：摇摆曲线成像分析半导体晶圆和ELO样品中的微晶取向错误

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Rocking curve imaging is based on measuring a series of Bragg-reflection digital topographs by monochromatic parallel-beam synchrotron radiation in order to quantify local crystal lattice rotations within a large surface area with high angular and high spatial resolution. In this paper we apply the method to map local lattice tilts in two distinct semiconductor sample types with lattice misorientations up to 0.5 degrees and with spatial resolution from 30 mu m down to I mu m. We analyse the measured surface-tilt data volumes for samples with almost smoothly varying specific misoriented defect formation in GaAs wafers and for an inherent subsurface grain structure of epitaxial lateral overgrowth wings in GaN. Backprojected tilt maps and histograms provide both local and global characteristics of the microcrystallinity. (c) 2006 Elsevier B.V. All rights reserved.

机译：摇摆曲线成像基于通过单色平行光束同步加速器辐射测量一系列布拉格反射数字形貌，以便以高角度和高空间分辨率量化大表面积内的局部晶格旋转。在本文中，我们应用该方法绘制了两种不同的半导体样品类型中的局部晶格倾斜图，这些样品类型的晶向失调最高达0.5度，空间分辨率从30微米下降到1微米。我们分析了样品的表面倾斜数据量，这些样品具有几乎平滑变化的GaAs晶片中特定的取向错误缺陷形成的样品以及GaN外延侧向过度生长翅膀的固有表面下晶粒结构。反投影的倾斜图和直方图提供了微晶度的局部和全局特征。（c）2006 Elsevier B.V.保留所有权利。

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《Applied Surface Science》 |2006年第1期|p. 188-193|共6页
作者
Mikulik P; Lubbert D; Pernot P; Helfen L; Baumbach T;
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作者单位

Masaryk Univ, Inst Condensed Matter Phys, CZ-61137 Brno, Czech Republic;

Forschungszentrum Karlsruhe, Inst Synchrotronstrahlung, D-76344 Eggenstein Leopoldshafen, Germany;

Humboldt Univ, Inst Phys, D-12489 Berlin, Germany;

European Synchrotron Radiat Facil, F-38043 Grenoble, France;

Fraunhofer Inst EADQ, D-01326 Dresden, Germany;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
X-ray diffraction; X-ray topography; microdiffraction; crystal growth; microstructure; GaAs; GaN; WING TILT; EPITAXY; GAN;

机译：X射线衍射;X射线形貌;微衍射;晶体生长;微观结构;GaAs;GaN;翼倾斜;表观;GAN;

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专利

1. Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging [J] . Lubbert D, Ferrari C, Mikulik P, Journal of Applied Crystallography . 2005,第1期

机译：摇摆曲线成像研究半导体晶片中位错的分布和Burgers向量
2. Interpretation of unexpected rocking curve asymmetry in LACBED patterns of semiconductors [J] . D. Jacob, A. Lefebvre Ultramicroscopy . 2003,第1期

机译：半导体LACBED图案中意外的摇摆曲线不对称性的解释
3. Confocal laser scanning microscopy and automated petrographic image analysis in different rock types: Two-dimensional images capillary pressure curves estimation and three-dimensional porosity reconstruction [J] . Caja M. A., Perez-Jimenez J. L., Leon M. F., AAPG Bulletin . 2019,第8期

机译：共聚焦激光扫描显微镜和不同岩石类型的自动化岩图像分析：二维图像毛细管压力曲线估计和三维孔隙率重建
4. Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps [C] . K.W. Kirchner, K.A. Jones, M.A. Derenge, European Conference on Silicon Carbide and Related Materials . 2007

机译：通过双晶X射线摇摆曲线和峰值位置图测量的SiC晶片中的马赛克和晶片弯曲
5. Statistical optimization and analysis of X-ray rocking curves: Application to epitaxial alloys of silicon, germanium, and gallium arsenide [D] . Staley, Thomas William. 1997

机译：X射线摇摆曲线的统计优化和分析：在硅，锗和砷化镓的外延合金中的应用
6. Three-dimensional rocking curve imaging to measure the effective distortion in the neighbourhood of a defect within a crystal: an ice example [O] . Armelle Philip, Jacques Meyssonnier, Rafael T. Kluender, -1

机译：三维摇摆曲线成像可测量晶体缺陷附近的有效畸变：冰的例子
7. Spatial micrometer-resolution three-dimensional local lattice misorientation determination of GaAs wafers by synchrotron radiation rocking-curve imaging [O] . P. Mikulík, P. Pernot, L. Helfen, 2004

机译：空间千分尺分辨率三维局部晶格杂散测定GaAs晶圆的同步辐射摇曲曲线成像
8. Development of a Whole-Wafer, Macroscale Inspection Software Method for Semiconductor Wafer Analysis [R] . 2003

机译：用于半导体晶圆分析的全晶圆宏观检测软件方法的开发

Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging

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