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X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(001)

机译:Si(001)上生长的TiNO和TiO2薄膜的表征中的X射线多重衍射

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摘要

TiO2 and TiNxOy thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(001) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO2[1 1 0] and TiNO[ 1 0 0] polycrystalline layers allowed to determine the growth rate (-80 angstrom/min) of TiO2 and (-40 angstrom/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., phi-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained. (c) 2006 Elsevier B.V. All rights reserved.
机译:通过X射线多重衍射表征了通过低压金属有机化学气相沉积(LP-MOCVD)在Si(001)衬底上生长的TiO2和TiNxOy薄膜。 TiO2 [1 1 0]和TiNO [1 0 0]多晶层的X射线反射率分析可以确定TiO2的生长速率(-80埃/分钟)和TiNO膜的(-40埃/分钟)。通过Renninger扫描(即(0 0 2)Si衬底主反射的phi扫描)进行的X射线多重衍射用作非常规方法,以获取由于薄膜常规沉积而导致的衬底晶格参数畸变。获得有关薄膜应变类型的信息。 (c)2006 Elsevier B.V.保留所有权利。

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