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The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

机译：不同掺杂元素对溅射ZnO薄膜微结构，压电系数和电阻率的影响

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摘要

ZnO film is attractive for high frequency surface acoustic wave device application when it is coupled with diamond. In order to get good performance and reduce insertion loss of the device, it demands the ZnO film possessing high electrical resistivity and piezoelectric coefficient d(33). Doping ZnO film with some elements may be a desirable method. In this paper, the ZnO films undoped and doped with Cu, Ni, Co and Fe, respectively (doping concentration is 2.0 at.%) are prepared by magnetron sputtering. The effect of different dopants on the microstructure, piezoelectric coefficient d(33), and electrical resistivity of the film are investigated. The results indicate that Cu dopant can enhance the c-axis orientation and piezoelectric coefficient d(33), the Cu and Ni dopant can increase electrical resistivity of the ZnO film up to 10(9) Omega cm. It is promising to fabricate the ZnO films doped with Cu for SAW device applications. (c) 2006 Elsevier B.V. All rights reserved.
机译：ZnO膜与金刚石结合后，对高频表面声波器件的应用很有吸引力。为了获得良好的性能并减少器件的插入损耗，要求具有高电阻率和压电系数d（33）的ZnO膜。用某些元素掺杂ZnO膜可能是一种理想的方法。在本文中，通过磁控溅射制备了分别未掺杂和掺杂有Cu，Ni，Co和Fe的ZnO膜（掺杂浓度为2.0 at。％）。研究了不同掺杂剂对薄膜的微观结构，压电系数d（33）和电阻率的影响。结果表明，Cu掺杂剂可增强c轴取向和压电系数d（33），Cu和Ni掺杂剂可将ZnO膜的电阻率提高到10（9）Ωcm。有前景的是制造用于SAW器件应用的掺杂有Cu的ZnO膜。 （c）2006 Elsevier B.V.保留所有权利。

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