Graft and characterization of 9-vinylcarbazole conjugated molecule on hydrogen-terminated silicon surface

Yao HP; Dai YJ; Feng JC; Wei W; Huang W

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Graft and characterization of 9-vinylcarbazole conjugated molecule on hydrogen-terminated silicon surface

机译：氢封端的硅表面上9-乙烯基咔唑共轭分子的接枝和表征

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Using wet chemical reaction between N-vinylcarbazole and hydrogen-terminated silicon surface, we present a new and simple route to directly bond,pi-conjugated organic molecule on silicon surface. The Si can be in the form of single crystal Si including heavily doped p-type Si, intrinsic Si, heavily doped n-type Si, on Si(1 1 1) and Si(1 0 0), and on n-type polycrystalline Si. The covalent bond between 9-vinylcarbazole and silicon surface was confirmed by reflectance F-FIR, XPS and contact angle measurement, respectively. A data-encompas sing explanation for the mechanism discusses the possible route of the reaction. This simple and low-costly reaction offers an attractive route to attach functional conjugated molecules onto the semiconductor surface which aims to create some unique molecular device in the future. (c) 2006 Published by Elsevier B.V.

机译：利用N-乙烯基咔唑与氢封端的硅表面之间的湿化学反应，我们提出了一种新的简单方法，可以直接在硅表面上键合π-共轭有机分子。 Si可以是单晶Si的形式，包括重掺杂的p型Si，本征Si，重掺杂的n型Si，在Si（1 1 1）和Si（1 0 0）上以及在n型多晶上硅。通过反射率F-FIR，XPS和接触角测量分别确认9-乙烯基咔唑和硅表面之间的共价键。该机制的数据压缩解释说明了反应的可能途径。这种简单且成本低廉的反应提供了一种将功能性共轭分子附着到半导体表面上的诱人途径，该途径旨在将来创造一些独特的分子器件。（c）2006年由Elsevier B.V.发布

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《Applied Surface Science》 |2006年第3期|p. 1534-1539|共6页
作者
Yao HP; Dai YJ; Feng JC; Wei W; Huang W;
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作者单位

Fudan Univ, Inst Adv Mat, Shanghai 200433, Peoples R China;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
graft; covalent bond; N-vinylcarbazole; silicon surface; NEGATIVE DIFFERENTIAL RESISTANCE; ULTRATHIN ORGANIC FILMS; LIGHT-EMITTING DEVICES; ALKYL MONOLAYERS; ENERGY-TRANSFER; FUNCTIONALIZED MONOLAYERS; TRANSPORT-PROPERTIES; SI(100) SURFACE; POROUS SILICON; CHEMISTRY;

机译：接枝;共价键;N-乙烯基咔唑;硅表面;负微分电阻;有机硅超薄膜;发光器件;烷基单分子层;能量传递;功能化单层;运输性能;SI（100）表面;多孔;

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2. Grafting of 1-alkynes to hydrogen-terminated (100)silicon surfaces [J] . G.F. CEROFOLINI, C. GALATI, S. REINA, Applied Physics. A, Materials Science & Processing . 2005,第1期

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3. Covalent immobilization of redox-active Fe(κ~2-dppe) (η~5-C_5Me_5)-Based π-Conjugated wires on oxide-free hydrogen-terminated silicon surfaces [J] . Green K., Gauthier N., Sahnoune H., Organometallics . 2013,第19期

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4. Wet Preparation of Defect-Free Hydrogen-Terminated Silicon Wafer Surface and Its Characterization in Atomic-Scale [C] . Hiroyuki Sakaue, Shoso Shingubara, Takayuki Takahagi International symposium on ultra clean processing of silicon surfaces . 2001

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5. Atomic-scale studies of the self-assembly of pi-conjugated molecules on silicon surfaces. [D] . Lin, Jui-Ching (Phillip). 2009

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8. Step Structure and Surface Morphology of Hydrogen-Terminated Silicon: (001) to (114); Journal article [R] . Laracuente, A. R., Whitman, L. J. 2003

机译：氢封端硅的步骤结构和表面形态：（001）至（114）;杂志文章

Graft and characterization of 9-vinylcarbazole conjugated molecule on hydrogen-terminated silicon surface

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