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首页> 外文期刊>Applied Surface Science >Microstructure and electrical properties of (Zr, Sn)TiO_4 thin film deposited on Si(100) using a sol-gel process
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Microstructure and electrical properties of (Zr, Sn)TiO_4 thin film deposited on Si(100) using a sol-gel process

机译：溶胶-凝胶法沉积在Si（100）上的（Zr，Sn）TiO_4薄膜的微观结构和电学性质

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摘要

Polycrystalline zirconium tin titanate (Zro_(0.8)Sn_(0.2)TiO_4, ZST) thin films with thickness of 81 nm were deposited successfully along the (100) on a p-type Si substrate by an improved sol-gel method. The deposited films were crystallized when annealing temperature was up to 450℃. The thickness and compositions of the interface layer between the ZST films and Si substrate were identified by high-resolution transmission electron microscope (HRTEM). The electrical properties such as leakage current density, flat-band voltage and capacitance of the films were measured and discussed. Furthermore, the mechanism of the leakage current was also investigated.
机译：通过改进的溶胶-凝胶法成功地沿（100）在p型Si衬底上沉积了厚度为81nm的多晶钛酸锆钛酸锆（Zro_（0.8）Sn_（0.2）TiO_4，ZST）薄膜。当退火温度达到450℃时，沉积的薄膜结晶。通过高分辨率透射电子显微镜（HRTEM）鉴定ZST膜和Si衬底之间的界面层的厚度和组成。测量并讨论了薄膜的电学性能，例如漏电流密度，平带电压和电容。此外，还研究了泄漏电流的机理。

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