On the hydrogen etching mechanism in plasma nitriding of metals

C.A. Figueroa; F. Alvarez

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On the hydrogen etching mechanism in plasma nitriding of metals

机译：金属等离子体氮化中的氢腐蚀机理

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Iron alloys and aluminum were nitrogen implanted in a controlled oxygen atmosphere and the role of hydrogen on the surface etching mechanisms studied. The surface composition was analyzed by in situ photoemission electron spectroscopy (XPS). In iron alloys, hydrogen strongly etches oxygen, improving nitrogen retention on the surface. On the other hand, hydrogen removes nitrogen from aluminum surfaces, with a deleterious effect on the nitriding effectiveness. The oxygen removal in iron alloys is associated with the catalytic effect of electrons in d-orbitals and the nitrogen removal in aluminum is associated with a steric effect.

机译：铁合金和铝在受控的氧气气氛中注入了氮，并研究了氢在表面蚀刻机理上的作用。通过原位发射电子光谱法（XPS）分析表面组成。在铁合金中，氢会强烈腐蚀氧，从而改善氮在表面的保留。另一方面，氢从铝表面除去氮，这对氮化效果产生有害影响。铁合金中的氧去除与d轨道中电子的催化作用相关，铝中的氮去除与空间效应相关。

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来源
《Applied Surface Science》 |2006年第4期|1806-1809|共4页
作者
C.A. Figueroa; F. Alvarez;
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作者单位

Instituto deFisica 'Gleb Wataghin', Unicamp, 13083-970 Campinas, SP, Brazil;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
surface modification; plasma nitriding; XPS analysis; metal alloys;

机译：表面改性;等离子体氮化XPS分析;金属合金;

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专利

1. On the hydrogen etching mechanism in plasma nitriding of metals [J] . Figueroa CA, Alvarez F Applied Surface Science . 2006,第4期

机译：金属等离子体氮化中的氢腐蚀机理
2. Plasma Parameters and Etching Mechanisms of Metals and Semiconductors in Hydrogen Chloride [J] . A. M. Efremov, S. A. Pivovarenok, V. I. Svettsov Russian Microelectronics . 2009,第3期

机译：氯化氢中金属和半导体的等离子体参数和腐蚀机理
3. Mechanism of increase in charge-pumping current of metal-nitride-oxide-silicon-field effect transistors during thick dielectric film etching using fluorocarbon gas plasma [J] . Yoshinari Ichihashi, rnYasushi Ishikawa, rnRyu Shimizu, Journal of Vacuum Science & Technology . 2010,第4期

机译：使用碳氟化合物气体等离子体进行厚介电膜蚀刻期间，金属氮化物-氧化物-硅-场效应晶体管的电荷泵电流增加的机理
4. Effect of Hydrogen in the Plasma-Enhanced Atomic Layer Etching of Silicon Nitride: A Molecular Dynamics Study [C] . Jomar Tercero, Akiko Hirata, Michiro Isobe, 応用物理学会春季学術講演会;応用物理学会 . -1

机译：氢气在氮化硅等等离子体增强原子层蚀刻的影响：分子动力学研究
5. The chemical mechanisms of metal etching in high density plasmas. [D] . Orland, Aaron Seth. 2003

机译：高密度等离子体中金属蚀刻的化学机理。
6. Significant Improvement of Copper Dry Etching Propertyof a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition [O] . Hiromasa Ohmi, *, Jumpei Sato, 2019

机译：铜干蚀性能的显着改善氮气添加高压氢基等离子体
7. Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2+, and CH2F+ ions [O] . Tomoko Ito, Kazuhiro Karahashi, Masanaga Fukasawa, 2011

机译：氮化硅氢氟碳等离子体蚀刻中的氢气效应：CF +，CF2 +，CHF2 +和CH2F +离子的梁研究
8. Etching Characteristics and Surface Analysis of Molecular Bean Epitaxy Grown P-Type Aluminum Gallium Nitride With Boron Trichloride/Chlorine Gases in Inductively Coupled Plasma (ICP) Dry Etching [R] . Semendy, F. , Boyd, P. , Lee, U. 2004

机译：电感耦合等离子体（ICp）干蚀刻中三氯化硼/氯气体分子外延生长p型氮化铝镓的刻蚀特性及表面分析

On the hydrogen etching mechanism in plasma nitriding of metals

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