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On the surface trapping parameters of polytetrafluoroethylene block

机译：聚四氟乙烯嵌段的表面俘获参数

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摘要

Surface flashover phenomena under high electric field are closely related to the surface characteristics of a solid insulating material between energized electrodes. Based on measuring the surface potential decaying curve of polytetrafluoroethylene (PTFE) block charged by a needle-plane corona discharge, its surface trapping parameters are calculated with the isothermal current theory, and the correlative curve between the surface trap density and its energy level is obtained. The maximum density of electron traps and hole traps in the surface layer of PTFE presents a similar value of ～2.7 x 10~(17) eV~(-1) m~(-3), and the energy level of its electron and hole traps is of about 0.85-1.0 eV and 0.80-0.90 eV, respectively. Via the X-ray photoelectron spectroscopy (XPS) technique, the F, C, K and O elements are detected on the surface of PTFE samples, and F shows a remarkable atom proportion of ～73.3%, quite different from the intrinsic distribution corresponding to its chemical formula. The electron traps are attributed to quantities of F atoms existing on the surface of PTFE due to its molecular chain with C atoms surrounded by F atoms spirally. It is considered that the distortions of chemical and electronic structure on solid surface are responsible for the flashover phenomena occurring at a low applied voltage.
机译：高电场下的表面闪络现象与通电电极之间的固体绝缘材料的表面特性密切相关。通过测量针面电晕放电带电的聚四氟乙烯（PTFE）嵌段的表面电势衰减曲线，利用等温电流理论计算其表面俘获参数，得到表面俘获密度与能级之间的相关曲线。 。聚四氟乙烯表面层中电子陷阱和空穴陷阱的最大密度近似为〜2.7 x 10〜（17）eV〜（-1）m〜（-3），并且电子和空穴的能级相似陷阱分别约为0.85-1.0 eV和0.80-0.90 eV。通过X射线光电子能谱（XPS）技术，在PTFE样品的表面上检测到F，C，K和O元素，并且F显示出显着的原子比例〜73.3％，与对应于F的本征分布有很大差异。它的化学式。电子陷阱由于存在于PTFE表面的F原子的数量而产生，这是由于其分子链具有被F原子螺旋形包围的C原子。可以认为，固体表面化学和电子结构的变形是在低施加电压下发生闪络现象的原因。

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