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首页> 外文期刊>Applied Surface Science >Structural, electrical and optical properties of TiO2 doped WO3 thin films
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Structural, electrical and optical properties of TiO2 doped WO3 thin films

机译：TiO2掺杂WO3薄膜的结构，电学和光学性质

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TiO2 doped WO3 thin films were deposited onto glass substrates and fluorine doped tin oxide (FTO) coated conducting glass substrates, maintained at 500 degrees C by pyrolytic decomposition of adequate precursor solution. Equimolar ammonium tungstate ((NH4)(2)WO4) and titanyl acetyl acetonate (TiAcAc) solutions were mixed together at pH 9 in volume proportions and used as a precursor solution for the deposition of TiO2 doped WO3 thin films. Doping concentrations were varied between 4 and 38%. The effect of TiO2 doping concentration on structural, electrical and optical properties of TiO2 doped WO3 thin films were studied. Values of room temperature electrical resistivity, thermoelectric power and band gap energy (E-g) were estimated. The films with 38% TiO2 doping in WO3 exhibited lowest resistivity, n-type electrical conductivity and improved electrochromic performance among all the samples. The values of thermoelectric power (TEP) were in the range of 23-56 mu V/K and the direct band gap energy varied between 2.72 and 2.86 eV. (c) 2005 Elsevier B.V. All rights reserved.
机译：将掺杂TiO2的WO3薄膜沉积到玻璃基板和涂覆了氟掺杂的氧化锡（FTO）的导电玻璃基板上，并通过适当分解前驱体溶液将其保持在500摄氏度。将等摩尔钨酸铵（（NH4）（2）WO4）和钛氧基乙酰丙酮钛（TiAcAc）溶液在pH值为9的情况下混合在一起，并用作沉积TiO2掺杂WO3薄膜的前体溶液。掺杂浓度在4至38％之间变化。研究了TiO2掺杂浓度对TiO2掺杂WO3薄膜结构，电学和光学性能的影响。估算了室温电阻率，热电功率和带隙能量（E-g）的值。在所有样品中，掺杂有38％TiO2的薄膜表现出最低的电阻率，n型电导率和改善的电致变色性能。热电功率（TEP）的值在23-56μV/ K的范围内，直接带隙能量在2.72和2.86 eV之间变化。 （c）2005 Elsevier B.V.保留所有权利。

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