We have studied the effect of annealing temperature on structural,electrical and optical properties of nominally undoped Zinc oxide (ZnO) thin films with c-axis orientations by X-ray diffraction(XRD), photoluminescence (PL), x-ray photoelectron spectroscopy(XPS) and Hall Effect measurement. The ZnO films were grown on quartz substrates by rf magnetron sputtering. Their crystalline and optical properties are improved by vacuum annealing. The as-grown ZnO film is insulating in conductivity, but its conduction changes with annealing temperature and a p-type undoped ZnO was obtained at annealing temperature of 590 ℃. Mechanisms of influence of annealing on structure, optical and electric properties of ZnO are discussed in the present paper.%本工作利用磁控溅射技术在石英衬底上生长出沿c轴择优取向的未掺杂ZnO薄膜,利用X射线衍射,光致发光,X射线光电子谱和Hall效应测量技术,研究了退火温度对结构、电学和光学性质的影响.发现真空退火可以提高ZnO的晶体和光学质量.生长的ZnO薄膜呈绝缘性质,经真空退火后变成导体,且导电类型和电性随退火温度而改变,并经590 ℃退火后获得p型ZnO.本文对退火影响ZnO结构、电学和光学性能的物理机制进行了讨论.
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