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Effect of substrate temperature on the growth of ITO thin films

机译:基板温度对ITO薄膜生长的影响

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Indium tin oxide (ITO) thin films were deposited onto glass substrates by rf magnetron sputtering of ITO target and the influence of substrate temperature on the properties of the films were investigated. The structural characteristics showed a dependence on the oxygen partial pressure during sputtering. Oxygen deficient films showed (4 0 0) plane texturing while oxygen-incorporated films were preferentially oriented in the [I 1 1] direction. ITO films with low resistivity of 2.05 x 10(-3) Omega CM were deposited at relatively low substrate temperature (150 degrees C) which shows highest figure of merit of 2.84 x 10(-3) square/Omega (c) 2005 Elsevier B.V. All rights reserved.
机译:通过射频磁控溅射ITO靶将铟锡氧化物(ITO)薄膜沉积在玻璃基板上,研究了基板温度对薄膜性能的影响。结构特性显示出在溅射过程中对氧分压的依赖性。缺氧薄膜表现出(4 0 0)平面纹理化,而掺入氧气的薄膜则优先沿[I 1 1]方向取向。在相对较低的基板温度(150摄氏度)下沉积具有2.05 x 10(-3)Omega CM低电阻率的ITO膜,该膜的最高品质因数为2.84 x 10(-3)平方/Ω(c)2005 Elsevier BV版权所有。

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