• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Investigation of Fermi-level pinning at silicon/porous- silicon interface by vibrating capacitor and surface photovoltage measurements
【24h】

Investigation of Fermi-level pinning at silicon/porous- silicon interface by vibrating capacitor and surface photovoltage measurements

机译：通过振动电容器和表面光电压测量研究硅/多孔硅界面上的费米能级钉扎

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper the PSi-silicon interface properties have been investigated by surface photovoltage (SPV) and vibrating capacitor (Kelvin) measurements. These methods are sensitive for the work function change and for the PSi-silicon interface potential barrier.The porous silicon (PSi) layer contains huge number of volume traps. Theoretical considerations support the high band bending (near to intrinsic condition or inversion) at the PSi-silicon interface, as high charge carrier concentration at the interface would result in high charge injection into the porous silicon.SPV and vibrating capacitor experiments show that the PSi volume charge and PSi-silicon interface charge tends to shift the interface to depleted state, near to the intrinsic condition (Fermi-level pinning). The interface conditions are summarised in the article and compared with the surface properties of the earlier discussed silicon-dioxide-covered silicon system.Light excitation can affect the charge stored in the PSi, thus the potential barrier at the PSi-silicon interface: the light induced surface voltage transients reveal this charge injection effect. (C) 2004 Elsevier B.V. All rights reserved.
机译：本文通过表面光电压（SPV）和振动电容器（Kelvin）的测量研究了PSi-硅的界面特性。这些方法对于功函数的变化和PSi-硅界面势垒都很敏感。多孔硅（PSi）层包含大量的体积陷阱。理论上的考虑支持PSi-硅界面处的高能带弯曲（接近内在条件或反转），因为界面处的高载流子浓度会导致向多孔硅中注入高电荷.SPV和振动电容器实验表明PSi体积电荷和PSi-硅界面电荷趋于将界面转变为耗尽状态，接近固有条件（费米级钉扎）。本文总结了界面条件，并将其与先前讨论的覆盖有二氧化硅的硅系统的表面性能进行了比较。光激发会影响PSi中存储的电荷，因此会影响PSi-硅界面上的势垒：光感应的表面电压瞬变揭示了这种电荷注入效应。 （C）2004 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号