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Semiconductor surface and interface passivation by cyanide treatment

机译：氰化物处理可钝化半导体表面和界面

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Cyanide treatment which simply involves immersion of semiconductors in cyanide solutions can passivate interface states as well as surface states. When Si surfaces are treated with KCN solutions, a surface photovoltage greatly increases, and the surface recombination velocity is calculated to be decreased from similar to3000 cm/s to less than 200 cm/s. When the cyanide treatment is applied to ultrathin SiO2/single-crystalline Si structure, interface states are passivated. The passivation of the SiO2/Si interface states increases the energy conversion efficiency of MOS solar cells to 16.2% and decreases the leakage current density for MOS diodes to 1/3-1/8. When the cyanide treatment is performed on polycrystalline (poly-) Si, defect states in Si up to at least 0.5 pm depth from the surface are passivated, resulting in a vast increase in the energy conversion efficiency of solar cells and a decrease in the dark current density of MOS diodes to 1/100-1/15 that without cyanide treatment. The defect passivation is attributed to the formation of Si-CN bonds from defect states. Si-CN bonds are found not to be ruptured by heat treatment at 800 degreesC and AM 1.5 100 mW/cm(2) irradiation for more than 1000 h. Density functional calculations show that the thermal and irradiation stability results from strong Si-CN bonds with the bond energy of 4.5 eV. When the cyanide treatment is performed on oxide/GaAs(1 0 0) structure, the interface state density decreases to similar to50%. The cyanide treatment can also passivate defect states in Cu2O films, resulting in increases in the carrier density and the band-to-band photoluminescence intensity. (C) 2004, Elsevier B.V. All rights reserved.
机译：仅仅将半导体浸入氰化物溶液中的氰化物处理可以钝化界面态和表面态。当用KCN溶液处理Si表面时，表面光电压大大增加，并且计算出表面复合速度从相似的3000cm / s降低到小于200cm / s。将氰化物处理应用于超薄SiO2 /单晶Si结构时，界面态会钝化。 SiO2 / Si界面态的钝化将<铟锡氧化物（ITO）/ SiO2 / Si> MOS太阳能电池的能量转换效率提高到16.2％，并降低了的泄漏电流密度MOS二极管为1 / 3-1 / 8。当在多晶（poly-）Si上进行氰化物处理时，Si的缺陷状态会钝化，直到表面至少0.5 pm深度，从而导致太阳能电池，并且 MOS二极管的暗电流密度降低到未经氰化物处理的1 / 100-1 / 15。缺陷钝化归因于由缺陷状态形成的Si-CN键。发现Si-CN键不会在800℃和AM 1.5 100 mW / cm（2）的辐射下经过1000小时以上的热处理而破裂。密度泛函计算表明，热和辐照稳定性是由牢固的Si-CN键和4.5 eV的键能引起的。当对氧化物/ GaAs（1 0 0）结构进行氰化物处理时，界面态密度降低到接近50％。氰化物处理还可以钝化Cu2O膜中的缺陷状态，从而导致载流子密度和带间光致发光强度增加。 （C）2004，Elsevier B.V.保留所有权利。

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