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Mechanism about improvement of NiSi thermal stability for Ni/Pt/Si(111) bi-layered system

机译:Ni / Pt / Si(111)双层体系中提高NiSi热稳定性的机理

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A thin interlayer of Pt can greatly enhance the thermal stability of NiSi films formed by rapid thermal annealing (RTA) on Si(1 1 1) substrates, as was revealed by X-ray diffraction (XRD) data and sheet resistance measurement. One possible reason for the enhanced NiSi thermal stability is attributed to the formation of the Ni0.945Pt0.055Si solid solution and its preferred orientation, leading to the decrease in the driving force and the increase in the interfacial energy change, respectively. Both of them increase the activation energy for the NiSi2 nucleation, improving the NiSi thermal stability. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 14]
机译:X射线衍射(XRD)数据和薄层电阻测量表明,薄的Pt中间层可以极大地增强通过在Si(11 1)基板上进行快速热退火(RTA)形成的NiSi膜的热稳定性。 NiSi热稳定性增强的一个可能原因是Ni0.945Pt0.055Si固溶体的形成及其优选的取向,分别导致驱动力的降低和界面能变化的增加。它们都增加了用于NiSi2成核的活化能,从而提高了NiSi的热稳定性。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:14]

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