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Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
Junction Technology, 2004. IWJT '04. The Fourth International Workshop on
召开年:
2004
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1.
Ultra-shallow junctions for novel device architectures beyond the 65 nm node
机译:
超浅结,适用于65 nm以上节点的新型器件架构
作者:
Agarwal A.
;
Gossmann H.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
semiconductor junctions;
nanotechnology;
semiconductor device manufacture;
ultra-shallow junctions;
device architectures;
65 nm node;
Si chip manufacturing;
ultra-thin-body;
multiple metal-gate devices;
high tilt implantation;
extension overlap;
chip integration;
shrinking thermal budgets;
65 nm;
2.
Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator
机译:
二维全频带蒙特卡洛器件仿真器研究双栅极SBTT的特性
作者:
Gang Du
;
Xiaoyan Liu
;
Meng Liu
;
Lei Sun
;
Ruqi Han
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
tunnel transistors;
MOSFET;
Monte Carlo methods;
semiconductor device models;
Schottky barriers;
conduction bands;
valence bands;
electron-phonon interactions;
impurity scattering;
impact ionisation;
surface scattering;
double-gate Schottky barrier tunneling transistor;
2D full-band Monte Carlo device simulator;
Schottky barrier contact model;
tunneling effect;
Schottky effect;
performance improvement;
conduction bands;
valence bands;
phonon scattering model;
impurity scattering model;
impact ionization scattering model;
surface roughness scattering model;
tunneling current;
electron drift velocity;
gate controllability;
2D potential distribution;
3.
CoSi/sub 2//Si Schottky junction formed by high flux metal ion implantation
机译:
高通量金属离子注入形成的CoSi / sub 2 // Si肖特基结
作者:
Zhang Hao
;
Wang Yan
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
cobalt compounds;
silicon;
Schottky barriers;
elemental semiconductors;
semiconductor-metal boundaries;
ion implantation;
semiconductor doping;
rapid thermal annealing;
CoSi/sub 2//Si Schottky junction;
high flux metal ion implantation;
electronic characteristics;
C-V characteristics;
I-V characteristics;
implantation parameters;
annealed;
rapid thermal annealing;
barrier height;
ideality factor;
20 kV;
1 min;
850 degC;
0.64 eV;
0.72 eV;
CoSi/sub 2/-Si;
4.
Deep sub-micron ultra-low power CMOS device design and optimization
机译:
深亚微米超低功耗CMOS器件的设计和优化
作者:
Xinfu Liu
;
Wu K.Y.
;
Jianghua Ju
;
Hokmin Ho
;
Xing Yu
;
Chen S.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
CMOS memory circuits;
low-power electronics;
leakage currents;
SRAM chips;
CMOS devices;
very low leakage current;
ultralow power;
GIDL;
poly edge junction leakage;
band to band leakage;
DIBL;
CMOS SRAM;
deep submicron device design;
low power consumption;
dynamic power consumption;
static power consumption;
subthreshold behavior;
5.
Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor
机译:
InGaP / InGaAs / GaAs骆驼栅p沟道拟态高电子迁移率晶体管的器件线性度增强
作者:
Jung-Hui Tsai
;
Shao-Yen Chiu
;
Ying-Cheng Chu
;
King-Poul Zhu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
indium compounds;
gallium compounds;
gallium arsenide;
III-V semiconductors;
high electron mobility transistors;
device linearity enhancement;
InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic HEMT;
p-n depletion;
large gate turn-on voltage;
maximum saturation current density;
2 V;
4 V;
4.8 GHz;
3.1 GHz;
100 micron;
1 micron;
InGaP-InGaAs-GaAs;
6.
Elevated temperature plasma doping technology for sub-50 nm SOI n-MOSFETs
机译:
低于50 nm SOI n-MOSFET的高温等离子体掺杂技术
作者:
Won-ju Cho
;
Chang-geun Ahn
;
Kiju Im
;
Jong-Heon Yang
;
Jihun Oh
;
In-Bok Baek
;
Seongjae Lee
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon-on-insulator;
MOSFET;
semiconductor doping;
ion implantation;
nanotechnology;
annealing;
elevated temperature plasma doping technology;
sub-50 nm SOI n-MOSFETs;
activation annealing;
low damage shallow junctions;
sheet resistance;
elevated temperature plasma doping;
527 degC;
50 nm;
7.
Fabrication of the sub-100 nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology
机译:
利用侧壁回刻技术制造100 nm以下的薄体SOI肖特基势垒隧穿晶体管
作者:
Sun L.
;
Liu X.Y.
;
Du G.
;
Kang J.F.
;
Guan X.D.
;
Han R.Q.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon-on-insulator;
Schottky barriers;
MOSFET;
tunnel transistors;
sputter etching;
rapid thermal annealing;
leakage currents;
buried layers;
Schottky barrier tunneling transistors;
sidewall etchback technology;
fabrication;
thin body SOI;
thermal emission leakage current;
buried oxide layer;
RIE;
RTA;
Schottky barrier MOSFET;
8.
Ge quantum dot infrared photo-detector
机译:
锗量子点红外光电探测器
作者:
Wang Minsheng
;
Wei Rongshan
;
Deng Ning
;
Chen Peiyi
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
germanium;
infrared detectors;
photodetectors;
semiconductor quantum dots;
self-assembly;
photoluminescence;
chemical vapour deposition;
elemental semiconductors;
vertical aligned superlattices;
multiple self-assembled island layers;
spacer layers;
ultrahigh vacuum chemical vapor deposition;
photoluminescence;
wetting layers;
quantum dot infrared photodetectors;
p-i-n junctions;
responsivity;
doping type;
self-organized growth;
waveguide geometry;
optimal structure design;
1.31 micron;
Ge;
9.
Ge quantum dot memory realized with vertical Si/SiGe resonant tunneling structure
机译:
利用垂直Si / SiGe共振隧穿结构实现Ge量子点存储器
作者:
Ning Deng
;
Liyang Pan
;
Lei Zhang
;
Peiyi Chen
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
germanium;
silicon;
Ge-Si alloys;
DRAM chips;
flash memories;
semiconductor quantum dots;
self-assembly;
resonant tunnelling diodes;
resonant tunnelling transistors;
atomic force microscopy;
elemental semiconductors;
quantum dot memory;
modified memory cell;
self-assembled quantum dots;
floating gate;
DRAM application;
vertical resonant tunneling structure;
inside double barrier;
hole tunneling barrier;
nonvolatile memory;
AFM image;
hole resonant tunneling diode;
threshold voltage shift;
field effect transistor;
fast flash memory;
Ge;
Si-SiGe;
10.
Investigation of step graded channel heterostructure field effect transistor with high gate voltage swing
机译:
具有高栅极电压摆幅的阶梯式沟道异质结构场效应晶体管的研究
作者:
Shu-Jenn Yu
;
Wei-Chou Hsu
;
Yih-Juan Li
;
Yeong-Jia Chen
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
aluminium compounds;
gallium arsenide;
indium compounds;
III-V semiconductors;
electron mobility;
semiconductor heterojunctions;
field effect transistors;
step graded channel heterostructure field effect transistor;
high gate voltage swing;
electron mobility;
Coulomb scattering;
AlGaAs/InGaAs interface;
high drain current density;
large gate voltage swing;
maximum saturation drain current density;
threshold voltages;
100 micron;
1.2 micron;
148 mS/mm;
1.9 V;
AlGaAs-InGaAs;
11.
Measurement of nonthermal illumination-enhanced self-diffusion in silicon
机译:
硅中非热照明增强自扩散的测量
作者:
Jung M.Y.L.
;
Seebauer E.G.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon;
elemental semiconductors;
self-diffusion;
interstitials;
vacancies (crystal);
secondary ion mass spectra;
rapid thermal annealing;
nonthermal illumination-enhanced self-diffusion;
Si;
strong lamp illumination;
annealing;
ion implantation;
SIMS depth profiling;
12.
Monte Carlo amorphous ion implantation possibility algorithm
机译:
蒙特卡洛非晶离子注入可能性算法
作者:
Jinyu Zhang
;
Shi Xiaokang
;
Suzuki K.
;
Oka H.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ion implantation;
semiconductor process modelling;
doping profiles;
Monte Carlo methods;
silicon;
energy loss of particles;
possibility theory;
Monte Carlo simulation;
ion implantation simulation;
amorphous silicon;
splitting algorithm;
MC-AIPA algorithm;
virtual ions;
nuclear scattering;
low energy rest position database;
statistic enhancement;
energy threshold;
splitting energy;
impurity profile;
scattering possibilities;
13.
Structural characterization of SiGe/Si dry thermal oxidation
机译:
SiGe / Si干热氧化的结构表征
作者:
Chen Z.J.
;
Zhang F.
;
Wang X.
;
Zou S.C.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
Ge-Si alloys;
silicon;
oxidation;
dislocation structure;
transmission electron microscopy;
ellipsometry;
X-ray chemical analysis;
atomic force microscopy;
surface morphology;
surface roughness;
interface roughness;
stoichiometry;
dry thermal oxidation;
graded layer;
structural characterization;
reduced germanium pileup;
oxidation ambient dependence;
TEM;
EDS;
AFM;
heterostructures optimization;
virtual substrates;
oxidation temperature;
misfit dislocations;
threading dislocations;
step-graded buffer;
spectroscopic ellipsometry;
morphology;
compositional depth profile;
stoichiometry;
thickness control;
surface roughness;
SiGe-Si;
SiGeO/sub 2/;
14.
The collapse of gate electrode in high-current implanter of batch type
机译:
间歇式大电流注入机中栅电极的塌陷
作者:
Kawasaki Y.
;
Tokunaga K.
;
Horita K.
;
Mitsuda K.
;
Yamaguchi A.
;
Ueno A.
;
Teratani A.
;
Katayama T.
;
Hayami K.
;
Togawa A.
;
Ohno Y.
;
Yoneda M.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ion implantation;
semiconductor doping;
gate electrode collapse;
batch type high-current implanter;
mechanical damage;
spin speed;
gate direction;
photoresist;
15.
The simulation breakdown characteristic of 4H-SiC SBD with edge termination extension
机译:
具有边缘终止扩展的4H-SiC SBD的模拟击穿特性
作者:
Hong-liang Lv
;
Yi-men Zhang
;
Yu-ming Zhang
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon compounds;
wide band gap semiconductors;
Schottky diodes;
semiconductor device breakdown;
semiconductor device models;
simulation breakdown characteristic;
4H-SiC SBD;
edge termination extension;
Schottky barrier diode;
breakdown performances;
16.
A new model for the phototransistor
机译:
光电晶体管的新模型
作者:
Tan S.W.
;
Chen W.T.
;
Chu M.Y.
;
Lour W.S.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
phototransistors;
optical receivers;
semiconductor device models;
heterojunction bipolar transistors;
integrated optoelectronics;
heterojunction phototransistor;
fabrication;
modeling;
common-emitter configurations;
Gummel-plot configurations;
voltage-biased;
current-biased;
independent voltage source;
DC current gain;
photocurrent;
optical gain;
modified extended Ebers-Moll model;
monolithically integrated optical receivers;
photodetector structures;
HBT-related technology;
17.
A new simulation method of ion implantation
机译:
离子注入的新模拟方法
作者:
Xiaokang Shi
;
Min Yul
;
Huihui Jil
;
Ru Huang
;
Xing Zhang
;
Jinyu Zhang
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ion implantation;
semiconductor process modelling;
Monte Carlo methods;
doping profiles;
semiconductor junctions;
energy loss of particles;
sensitivity analysis;
random noise;
Gaussian distribution;
efficient simulations;
ion implantation;
ultrashallow junction technology;
splitting method;
sensitivity analysis;
statistical noise;
quantitative description;
deductive formulas;
muzzle condition;
final stopping position;
combining method;
Gauss distribution;
normalized dispersion;
dopant profile;
18.
A new S-shaped switch based on an InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor
机译:
基于InGaP / GaAs / InGaAs阶梯组成发射极异质结双极晶体管的新型S形开关
作者:
Jung-Hui Tsai
;
Shao-Yen Chiu
;
Ying-Cheng Chu
;
King-Poul Zhu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
indium compounds;
gallium compounds;
gallium arsenide;
III-V semiconductors;
heterojunction bipolar transistors;
semiconductor switches;
semiconductor quantum wells;
S-shaped switch;
InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor;
HBT;
avalanche multiplication;
discontinuous confinement effects;
quantum well;
triple-route S-shaped negative-differential-resistance switch;
60 mV;
InGaP-GaAs-InGaAs;
19.
A novel SiGe/Si hetero-junction power diode utilizing an ideal ohmic contact
机译:
利用理想欧姆接触的新型SiGe / Si异质结功率二极管
作者:
Ma Li
;
Gao Yong
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon;
Ge-Si alloys;
power semiconductor diodes;
power semiconductor switches;
ohmic contacts;
heterojunction power diode;
ideal ohmic contact;
switching power diodes;
reverse recovery characteristics;
forward voltage drop;
high-speed soft diode;
power IC;
switched-mode power supplies;
universal contact;
mosaic layer;
SiGe-Si;
20.
A precise and efficient analytical method of realistic dopant fluctuations in shallow junction formation
机译:
一种精确有效的浅结形成中实际掺杂物波动的分析方法
作者:
Xiaokang Shi
;
Min Yu
;
Jun Yin
;
Guoyan Zhang
;
Ru Huang
;
Xing Zhang
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ion implantation;
doping profiles;
semiconductor process modelling;
semiconductor junctions;
molecular dynamics method;
sensitivity analysis;
fluctuations;
realistic dopant fluctuations;
shallow junction formation;
precise efficient analytical method;
normalized standard deviation;
characteristics variation;
within-die fluctuations;
sensitivity analysis;
MDM simulator;
threshold voltage frequency distribution;
21.
A study of antimony or arsenic implanted extensions with or without xenon pre-amorphization
机译:
有或没有氙预非晶化的锑或砷植入延伸物的研究
作者:
Pouydebasque A.
;
Dumont B.
;
El Farhanel R.
;
Boeuf F.
;
Muller A.
;
Hafimaoui A.
;
Skotnicki T.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ion implantation;
semiconductor doping;
MOSFET;
antimony;
arsenic;
xenon;
electrical behavior;
NMOS transistors;
source/drain extensions;
Xe pre-amorphizing implant;
As pre-amorphizing implant;
threshold voltage characteristics;
reduced Short Channel Effect;
Drain Induced Barrier Lowering;
Sb implantation;
22.
Accurate determination of ultra-shallow junction sheet resistance with a non-penetrating four point probe
机译:
使用非穿透式四点探针准确测定超浅结薄层电阻
作者:
Hillard R.J.
;
Borland J.
;
Win Ye C.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
secondary ion mass spectra;
semiconductor junctions;
tunnelling;
ultra-shallow junction sheet resistance;
nonpenetrating four point probe;
four point probe sheet resistance;
Source-Drain structures;
Elastic Material gate probes;
Si surface;
large direct tunneling currents;
native oxide;
low impedance contact;
23.
Lateral trench electrode power MOS including a local doping region for power electronic system
机译:
横向沟槽电极功率MOS,包括用于功率电子系统的局部掺杂区
作者:
Kim D.J.
;
Sung M.Y.
;
Kang E.G.
;
Chung H.S.
;
Nahm E.S.
;
Lee D.J.
;
Lee J.H.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
power MOSFET;
isolation technology;
power integrated circuits;
semiconductor device models;
semiconductor device breakdown;
lateral trench electrode power MOS;
power MOSFET;
power electronics;
forward blocking voltage;
TMA-MEDICI simulation;
trench oxide layer;
electrical characteristics;
TSUPREM-4 process simulator;
2-D device simulator;
I-V characteristic curves;
doping width;
breakdown characteristics;
smart power IC;
24.
Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches
机译:
近红外光激活的4H-SiC达林顿晶体管开关的仿真
作者:
Hongbin Pu
;
Zhiming Chen
;
Xianfeng Feng
;
Baoshan Ma
;
Liuchen Li
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
bipolar transistor switches;
power semiconductor switches;
semiconductor device models;
photodetectors;
current density;
silicon compounds;
wide band gap semiconductors;
Darlington transistor switches;
near infrared light-activated switch;
4H polytope;
heterojunction transistor power switch;
base current;
optical illumination;
two-dimensional numerical simulation;
MEDICI;
photodetector;
light-activated device;
current density distribution;
auxiliary transistor;
solid-state switches;
absorption coefficient;
spectral response;
SiC;
25.
Effects of ion-implantation on light-emitting FeSi/sub 2/ shallow junction
机译:
离子注入对发光FeSi / sub 2 /浅结的影响
作者:
Chou
;
L.J.
;
Lu
;
H.T.
;
Chen
;
L.J.
;
Huang
;
J.S.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
iron compounds;
ion implantation;
semiconductor epitaxial layers;
photoluminescence;
semiconductor quantum dots;
semiconductor junctions;
annealing;
transmission electron microscopy;
ion-implantation;
substrate orientation;
nanostructures;
photoluminescence;
ultrathin films;
beta-phase formation;
implantation species;
epitaxial films;
light-emitting shallow junction;
integrated optoelectronic devices;
quantum dots;
TEM;
photoexcitation;
quantum confinement;
energy shift;
annealing;
FeSi/sub 2/;
26.
Estimation of ultra-shallow plasma doping (PD) layer's optical absorption properties by spectroscopic ellipsometry (SE)
机译:
用光谱椭偏仪(SE)估算超浅等离子体掺杂(PD)层的光吸收特性
作者:
Jin C.G.
;
Sasaki Y.
;
Tsutsui K.
;
Tamura H.
;
Mizuno B.
;
Higaki R.
;
Satoh T.
;
Majima K.
;
Sauddin H.
;
Takagi K.
;
Ohmi S.
;
Iwai H.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
semiconductor doping;
ellipsometry;
impurity absorption spectra;
ultra-shallow plasma doping;
optical absorption properties;
spectroscopic ellipsometry;
optical absorption coefficients;
higher DC bias;
400 to 800 nm;
60 sec;
10 nm;
Si;
27.
Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization
机译:
硼注入预非晶硅的多脉冲激光退火及工艺优化
作者:
Byung Jin Cho
;
Poon D.
;
Leng Seow Tan
;
Bhat M.
;
See A.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon;
boron;
elemental semiconductors;
amorphous semiconductors;
ion implantation;
laser beam annealing;
rapid thermal annealing;
multiple-pulse laser annealing;
preamorphized Si:B;
process optimization;
moderate energy fluence;
Hall analysis;
Si:B;
28.
Studying shallow junction technology by atomistic modeling
机译:
通过原子建模研究浅结技术
作者:
Min Yu
;
Ru Huang
;
Xiaokang Shil
;
Huihui Jil
;
Xing Zhang
;
Yangyuan Wang
;
Hideki Oka
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ion implantation;
annealing;
diffusion;
extended defects;
Monte Carlo methods;
molecular dynamics method;
energy loss of particles;
secondary ion mass spectra;
semiconductor process modelling;
semiconductor junctions;
atomistic modeling;
shallow junction technology;
advanced junction technology;
molecular dynamics method;
low energy ion implantation simulation;
kinetic Monte Carlo method;
enhanced diffusion;
dose dependent ultralow energy implantation;
RTA;
SIMS data;
energy contamination;
extended defects dissipation;
ion-solid interaction simulation;
binary collision approximation;
slowing-down process;
binding energy;
29.
Technology requirement for leading edge foundry operation in mainland China
机译:
中国大陆先进铸造厂的技术要求
作者:
Simon Yang
;
Hanming Wu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
semiconductor technology;
silicon;
elemental semiconductors;
materials preparation;
leading edge foundry operation;
advanced technology;
consistent quality;
flexible service;
equipment maturity;
foundry volume ramp;
30.
Transport properties of the two-dimensional electron gas in Al/sub x/Ga/sub 1-x/N/GaN heterostructures
机译:
Al / sub x / Ga / sub 1-x / N / GaN异质结构中二维电子气的传输特性
作者:
Bo Shen
;
Ning Tang
;
Jie Lu
;
Zewei Zheng
;
Dunjun Chen
;
Yongsheng Gui
;
Qiu Zhijun
;
Chunping Jiang
;
Shaoling Gu
;
Junhao Chu
;
Rong Zhang
;
Youdou Zheng
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
two-dimensional electron gas;
Shubnikov-de Haas effect;
interface states;
semiconductor heterojunctions;
transport properties;
two-dimensional electron gas;
Al/sub x/Ga/sub 1-x/N/GaN heterostructures;
strong Shubnikov-de Hass oscillations;
double periodicity;
triangular quantum well;
energy separation;
quantum scattering time;
spin splitting;
75 meV;
Al/sub x/Ga/sub 1-x/N-GaN;
31.
Ultra-shallow arsenic profiling using enhanced depth-resolution analysis technique with medium energy ion scattering
机译:
使用增强的深度分辨率分析技术和中能离子散射的超浅砷轮廓分析
作者:
Takai M.
;
Ichihara S.
;
Abo S.
;
Wakaya F.
;
Sayama H.
;
Eimori T.
;
Inoue Y.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
semiconductor doping;
arsenic;
ion implantation;
secondary ion mass spectra;
ion-surface impact;
doping profiles;
rapid thermal annealing;
silicon;
elemental semiconductors;
ultra-shallow As profiling;
enhanced depth-resolution analysis technique;
medium energy ion scattering;
toroidal electrostatic analyzer;
RTA;
spike annealing;
SIMS;
MEIS;
1 to 5 keV;
Si:As;
32.
An asymmetrical source/drain junction structure for SOI RFIC: immune to floating body effects
机译:
SOI RFIC的不对称源/漏结结构:不受浮体效应的影响
作者:
Yang R.
;
Li J.F.
;
Qian H.
;
Han Z.S.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon-on-insulator;
MOSFET;
oxidation;
isolation technology;
doping profiles;
passivation;
semiconductor process modelling;
etching;
ion implantation;
CMOS integrated circuits;
semiconductor device breakdown;
UHF integrated circuits;
microwave integrated circuits;
silicon compounds;
SOI RFIC;
asymmetrical source-drain junction structure;
floating body effects;
dual sidewalls;
Ti-salicide;
SIMOX substrate;
simplified process steps;
DC characteristics;
LDMOS cutoff frequency;
front-end circuits;
CMOS technology;
process flow simulation;
threshold voltage;
breakdown characteristics;
thermal oxide;
LOCOS isolation;
ion implant;
etch back;
passivation;
doping profile;
transfer characteristics;
SiO/sub 2/-Si/sub 3/N/sub 4/;
33.
Characteristics of low-temperature preannealing effects on laser-annealed P/sup +//N and N/sup +//P ultra-shallow junctions
机译:
低温退火对P / sup + // N和N / sup + // P超浅结的影响
作者:
Sungkweon Baek
;
Sungho Heo
;
Hyejuncg Choi
;
Hyunsang Hwang
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
laser beam annealing;
carrier density;
point defects;
p-n junctions;
semiconductor doping;
ion implantation;
silicon;
boron;
low-temperature preannealing effects;
ultra-shallow junctions;
plasma doping;
excimer laser annealing;
point defects;
300 to 500 degC;
Si:B;
B/sub 2/H/sub 6/;
PH/sub 3/;
34.
Growth of graded SiGe films by novel UHV/CVD system
机译:
通过新型UHV / CVD系统生长梯度SiGe膜
作者:
Wentao Huang
;
Changchun Chen
;
Xiaoyi Xiong
;
Zhihong Liu
;
Wei Zhang
;
Pei-hsin Tsien
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
Ge-Si alloys;
chemical vapour deposition;
semiconductor epitaxial layers;
semiconductor growth;
rapid thermal processing;
X-ray diffraction;
vapour phase epitaxial growth;
heterojunction bipolar transistors;
graded fraction film growth;
ultrahigh vacuum CVD system;
X-ray diffraction;
heterojunction bipolar transistor;
film quality;
single-wafer;
electrical performance;
infrared rapid-thermal process;
epitaxial wafer;
output characteristic;
SiGe;
35.
Hydrogenation-enhanced low temperature activation of boron in silicon
机译:
加氢增强硅中硼的低温活化
作者:
Vengurlekar A.
;
Ashok S.
;
Theodore D.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
boron;
silicon;
elemental semiconductors;
ion implantation;
semiconductor doping;
hydrogen;
carrier density;
plasma materials processing;
rapid thermal annealing;
hydrogenation-enhanced low temperature activation;
Si:B;
ECR plasma;
activation;
diffusion;
rapid thermal annealing;
spreading resistance profiling;
vacancies;
lattice-relaxation effect;
20 sec;
450 degC;
550 degC;
650 degC;
850 degC;
Si:B,H;
36.
Magnetointersubband scattering oscillations of two-dimensional electron gas in Al/sub x/Ga/sub 1-x/N/GaN heterostructures
机译:
Al / sub x / Ga / sub 1-x / N / GaN异质结构中二维电子气的磁间子带散射振荡
作者:
Ning Tang
;
Bo Shen
;
Chunmin Tao
;
Dunjun Chen
;
Yongsheng Gui
;
Chunping Jiang
;
Zhijun Qiu
;
Rong Zhang
;
Youdou Zheng
;
Shaoling Gu
;
Junhao Chu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
two-dimensional electron gas;
interface states;
Shubnikov-de Haas effect;
semiconductor heterojunctions;
magnetointersubband scattering oscillations;
two-dimensional electron gas;
Al/sub x/Ga/sub 1-x/N/GaN heterostructures;
unintentionally doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures;
temperature dependence;
Shubnikov-de Haas oscillations;
10 to 17 K;
Al/sub 0.22/Ga/sub 0.78/N-GaN;
37.
Optimal Ni/Co thickness extraction and two step rapid thermal process of the nickel-silicide for nanoscale complementary metal oxide semiconductor (CMOS) application
机译:
用于纳米级互补金属氧化物半导体(CMOS)应用的镍硅化物的最佳Ni / Co厚度提取和两步快速热处理
作者:
Jang-Gn Yun
;
Soon-Young Oh
;
Hee-Hwan Ji
;
Bin-Feng Huang
;
Young-Ho Park
;
Seong-Hyung Park
;
Heui-Seung Lee
;
Dae-Byung Kim
;
Ui-Sik Kim
;
Han-Seob Cha
;
Sang-Bum Hu
;
Jeong-Gun Lee
;
Hi-Deok Lee
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
CMOS integrated circuits;
rapid thermal processing;
nanostructured materials;
rapid thermal annealing;
thermal stability;
Ni/Co thickness extraction;
two step rapid thermal process;
nanoscale complementary metal oxide semiconductor;
post-silicidation annealing;
upper protection layer;
lower conduction layer;
CoSi/sub x/;
NiSi;
Ni-Co;
Si;
38.
Overview of the prospects of ultra-rapid thermal process for advanced CMOSFETs
机译:
先进CMOSFET超快速热处理的前景概述
作者:
Suguro K.
;
Ito T.
;
Matsuo K.
;
Iinuma T.
;
Nishinohara K.T.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
rapid thermal annealing;
CMOS integrated circuits;
MOSFET;
nanotechnology;
ultra-rapid thermal process;
advanced CMOSFETs;
ultra shallow junction;
low resistance;
45-65nm technology node;
rapid thermal annealing;
pn junction leakage specification;
spike RTA;
laser annealing;
SPE;
flash lamp annealing;
lower sheet resistance;
lower crystal damage density;
45 to 65 nm;
10 nm;
39.
Study of Co silicidation process for 0.18/0.15/spl mu/m CMOS technology
机译:
0.18 / 0.15 / spl mu / m CMOS工艺的Co硅化工艺研究
作者:
Hu Hengsheng
;
Chen Shoumian
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
cobalt compounds;
CMOS integrated circuits;
titanium compounds;
titanium;
boron;
surface cleaning;
contact resistance;
Co silicidation process;
0.15/spl mu/m CMOS technology;
0.18/spl mu/m CMOS technology;
reactive Ti;
surface condition;
monosilicide formation;
surface cleaning;
RTP2;
thermal budget;
junction leakage performance;
patterned wafers;
0.15 micron;
0.18 micron;
CoSi/sub 2/;
Co-Ti;
Co-TiN;
40.
Recent development of nitride semiconductor electronic devices for next generation wireless communications
机译:
用于下一代无线通信的氮化物半导体电子器件的最新发展
作者:
Nanishi Y.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
field effect transistors;
telecommunication equipment;
nitride semiconductor electronic devices;
next generation wireless communications;
AlGaN/GaN HFETs;
high-power operation;
high-frequency operation;
150 W;
2 GHz;
3.2 W;
30 GHz;
AlGaN-GaN;
41.
SPER junction optimisation in 45 nm CMOS devices
机译:
45 nm CMOS器件中的SPER结优化
作者:
Lindsay R.
;
Severi S.
;
Pawlak B.J.
;
Henson K.
;
Lauwers A.
;
Pages X.
;
Satta A.
;
Surdeanu R.
;
Lendzian H.
;
Maex K.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
contact resistance;
CMOS integrated circuits;
semiconductor junctions;
solid phase epitaxial growth;
annealing;
leakage currents;
MOSFET;
nanotechnology;
SPER junction optimisation;
45 nm CMOS devices;
ultra-shallow junction formation;
solid phase epitaxial regrowth;
junction profiles;
spike annealing;
transistor performance;
dopant profile;
transistor requirements;
optimised junction implant;
activation level;
junction overlap;
channel deactivation;
contact resistance;
junction leakage;
poly depletion;
gate leakage;
45 nm;
42.
The nanoelectronic CMOS era: silicon meets the other materials on the roadmap
机译:
纳米电子CMOS时代:硅符合路线图上的其他材料
作者:
Deleonibus S.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
CMOS integrated circuits;
nanotechnology;
CMOS logic circuits;
nanoelectronic CMOS era;
low voltage;
low power;
high performance;
sub 50nm gate length CMOS devices;
gate dielectric;
drain engineering;
source engineering;
43.
An economic method for fabrication sub-quarter-/spl mu/m gate doped-channel FET's by photolithography
机译:
通过光刻法制造四分之一/ splμ/ m栅掺杂沟道FET的经济方法
作者:
Tan
;
S.W.
;
Chen
;
W.T.
;
Chu
;
M.Y.
;
Lour
;
W.S.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
photolithography;
high electron mobility transistors;
indium compounds;
gallium arsenide;
III-V semiconductors;
semiconductor device manufacture;
carrier density;
carrier mobility;
economic method;
fabrication sub-quarter-/spl mu/m gate doped-channel FET's;
photolithography;
conventional i-line optical lithography;
deposited gate metal;
taped resist profile;
SOG thickness;
gate length;
hetero-doped-channel field-effect transistor;
digital-graded In/sub x/Ga/sub l-x/As channel;
sheet carrier density;
mobility;
maximum transconductance;
0.5 micron;
0.41 micron;
370 mS/mm;
In/sub x/Ga/sub l-x/As;
44.
Characterization of thin layers in shallow junction technology by quadrupole SIMS
机译:
利用四极杆SIMS表征浅结技术中的薄层
作者:
Maul J.L.
;
Ehrke U.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
secondary ion mass spectra;
semiconductor junctions;
oxygen;
nitrogen;
silicon compounds;
Ge-Si alloys;
process control;
semiconductor-insulator boundaries;
thin layers;
shallow junction technology;
quadrupole SIMS;
SiGe EPI;
Oxynitride process control;
quality control;
high-k layer metrology;
low energy O beam analysis;
N distribution;
SiGe;
SiON;
45.
Influence of rework ashing temperature on the phase segregation and CuAl/sub 2/ precipitation in Al(Cu) metal line stacks
机译:
返工灰化温度对Al(Cu)金属线束中相偏析和CuAl / sub 2 /析出的影响
作者:
Ma
;
R.
;
Charge Huang
;
Xiang Wang
;
HaiBo Yao
;
Jin Wu
;
Shaohua Liu
;
Ruijing Han
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
copper alloys;
aluminium alloys;
precipitation;
titanium compounds;
silicon compounds;
grain boundary segregation;
sputter etching;
transmission electron microscopy;
metallisation;
rework ashing temperature;
phase segregation;
CuAl/sub 2/ precipitation;
Al(Cu) metal line stacks;
metal bridging;
yield degradation;
TiN/Al(0.5Cu)/TiN/SiON/SiO/sub 2/ stack;
reworked wafers;
yield;
short loop wafers;
grain boundary;
local masking;
CuAl/sub 2/;
TiN-AlCu-TiN-SiON-SiO/sub 2/;
46.
Structure properties of GaN/sub 1-x/P/sub x/ ternary alloys grown by metal-organic chemical vapor deposition
机译:
通过金属有机化学气相沉积法生长的GaN / sub 1-x / P / sub x /三元合金的结构性质
作者:
Chen
;
D.J.
;
Shen
;
B.
;
Xu
;
F.J.
;
Tao
;
Y.Q.
;
Zhang
;
R.
;
Shi
;
Y.
;
Zheng
;
Y.D.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
MOCVD coatings;
semiconductor thin films;
semiconductor growth;
Raman spectra;
X-ray photoelectron spectra;
core levels;
interstitials;
X-ray diffraction;
GaN/sub 1-x/P/sub x/;
metal-organic chemical vapor deposition;
core level;
interstitials;
X-ray photoelectron spectroscopy;
X-ray diffraction spectra;
hexagonal structure;
Raman spectra;
backscattering geometry;
vibrational modes;
disorder-activated scattering;
gap modes;
Ga-P bond vibrations;
428 cm/sup -1/;
256 cm/sup -1/;
314 cm/sup -1/;
377 cm/sup -1/;
47.
Surface-potential-plus approach for next generation CMOS device modeling
机译:
用于下一代CMOS器件建模的表面电位加法
作者:
Jin He
;
Xuernei Xi
;
Hui Wan
;
Mansun Chan
;
Niknejad A.
;
Chenming Hu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
semiconductor device models;
MOSFET;
Poisson equation;
surface potential;
inversion layers;
doping profiles;
next generation device modeling;
CMOS device modeling;
surface-potential-plus approach;
accurate transistor model;
advanced charge-based MOS transistor model;
basic device physics;
completely symmetric model;
unified exact inversion charge relation;
retrograde doping;
uniform doping;
small dimensional effects;
double-gate MOSFET;
quasi 2D Poisson equation;
quasi-Fermi potential;
channel charge distribution;
polysilicon depletion;
I-V models;
C-V models;
band bending;
48.
Accurate profiling of PN junction carrier concentration by scanning nonlinear dielectric microscopy (SNDM)
机译:
通过扫描非线性介电显微镜(SNDM)准确分析PN结载流子浓度
作者:
Matsukawa T.
;
Yasumuro C.
;
Masahara M.
;
Tanoue H.
;
Kanemaru S.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
carrier density;
doping profiles;
semiconductor doping;
scanning probe microscopy;
surface diffusion;
p-n junctions;
accurate profiling;
PN junction carrier concentration;
scanning nonlinear dielectric microscopy;
doping integrity;
transistor;
nonlinear capacitance profiling;
depletion layer;
carrier distribution;
dopant out-diffusion;
carrier state analysis;
process parameters;
800 to 950 degC;
200 nm;
49.
Anti-weak localization of the two dimensional electron gas in modulation-doped Al/sub x/Ga/sub 1-x/N/GaN single quantum well
机译:
二维电子气在调制掺杂的Al / sub x / Ga / sub 1-x / N / GaN单量子阱中的抗弱定位
作者:
Lu
;
J.
;
Shen
;
B.
;
Tang
;
N.
;
Chen
;
D.J.
;
Zhang
;
R.
;
Shi
;
Y.
;
Zheng
;
Y.D.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
semiconductor quantum wells;
two-dimensional electron gas;
magnetoresistance;
spin-orbit interactions;
weak localisation;
anti-weak localization;
two dimensional electron gas;
modulation-doped Al/sub x/Ga/sub 1-x/N/GaN single quantum well;
magnetoresistance;
elastic scattering time;
dephasing time;
spin-orbit scattering time;
triangular quantum well;
Al/sub 0.22/Ga/sub 0.78/N-GaN;
50.
Atomic simulation of ion implantation into HfO/sub 2/: LEACS vs. TSUPREM4
机译:
离子注入HfO / sub 2 /的原子模拟:LEACS与TSUPREM4
作者:
Hao Shi
;
Xiaokang Shi
;
Min Yu
;
Ru Huang
;
Xing Zhang
;
Yangyuan Wang
;
Suzuki
;
K.
;
Oka
;
H.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
MOSFET;
ion implantation;
semiconductor process modelling;
molecular dynamics method;
Monte Carlo methods;
hafnium compounds;
dielectric thin films;
Monte Carlo simulator;
ion implantation simulator;
TSUPREM4;
atomic simulator;
LEACS;
molecular dynamics method;
MOSFET;
physical models;
Newton force function;
binary collision;
HfO/sub 2/;
51.
Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)
机译:
InP / InGaAs隧穿发射极双极晶体管(TEBT)的特性
作者:
Chun-Yuan Chen
;
Chii-Maw Uang
;
Shiou-Ying Cheng
;
Hung-Ming Chuang
;
Ssu-I Fu
;
Ching-Hsiu Tsai
;
Chi-Yuan Chang
;
Wen-Chau Liu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
indium compounds;
gallium arsenide;
III-V semiconductors;
heterojunction bipolar transistors;
surface recombination;
InP/InGaAs tunneling emitter bipolar transistor;
DC performances;
extremely wide collector current regime;
ultra-low collector current;
common-emitter breakdown voltages;
common-base breakdown voltages;
5 V;
2 V;
40 mV;
52.
Contribution and control of neutral gas absorption effects in the plasma doping of boron into Si
机译:
硼等离子掺杂到硅中中性气体吸收效应的贡献和控制
作者:
Tsutsui K.
;
Higaki R.
;
Sasaki Y.
;
Sato T.
;
Tamura H.
;
Mizuno B.
;
Iwai H.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon;
boron;
elemental semiconductors;
semiconductor doping;
ion implantation;
neutral gas absorption effects;
plasma doping;
Si:B;
ionized species;
neutral species;
gas phase doping;
53.
Device effect of low energy implantation in high density plasma
机译:
高密度等离子体中低能注入的器件效应
作者:
Hanming Wu
;
Lee S.
;
Xing Yu
;
Yong Liu
;
Chen J.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ion implantation;
semiconductor doping;
plasma materials processing;
low energy implantation;
high density plasma;
device effect;
low energy component;
ion energy distribution function;
plasma implantation;
54.
Dopant redistribution induced by Ni silicidation at 300/spl deg/C
机译:
镍硅化在300 / spl deg / C时引起的掺杂物重新分布
作者:
Yu-Long Jiang
;
Agarwal
;
A.
;
Guo-Ping Ru
;
Xin-Ping Qu
;
Bing-Zong Li
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
nickel compounds;
silicon;
elemental semiconductors;
arsenic;
boron;
secondary ion mass spectra;
doping profiles;
transmission electron microscopy;
impurity distribution;
segregation;
dopant redistribution;
Ni silicidation;
cross-section transmission electron microscopy;
secondary ion mass spectroscopy;
dopant segregation;
NiSi/sub 2//Si:As;
NiSi/sub 2//Si:B;
void layer formation;
Kirkendall voiding effect;
volume reduction;
300 degC;
NiSi/sub 2/-Si:As;
NiSi/sub 2/-Si:B;
55.
Effect of rapid thermal annealing on Ti/Al-GaN contacts
机译:
快速热退火对Ti / Al-GaN触点的影响
作者:
Xue Li
;
Yong Kang
;
Xiangyang Li
;
Haimei Gong
;
Haxiong Fang
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
titanium;
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
rapid thermal annealing;
Schottky barriers;
MOCVD coatings;
sputtered coatings;
Auger electron spectra;
atomic force microscopy;
contact resistance;
surface morphology;
rapid thermal annealing;
Ti/Al-GaN contacts;
nonintentionally-doped wurtzite GaN epitaxial layers;
metal organic chemical vapour deposition;
ion beam sputtering;
I-V measurements;
metalorganic chemical vapour deposition technique;
AES depth profiles;
surface morphologies;
AFM;
specific contact resistivity;
annealing temperature;
ideality factors;
tunneling current mechanism;
root mean square roughness;
surface region;
thermal stability;
Ohmic contacts;
24 nm;
90 nm;
600 degC;
Ti-AlGaN;
56.
Effect of silicon substrate hydrogenation treatment on nickel silicide formation
机译:
硅衬底加氢处理对硅化镍形成的影响
作者:
Vengurlekar A.
;
Balasubramanian S.
;
Ashok S.
;
Theodore D.
;
Chi D.Z.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
nickel compounds;
nickel;
integrated circuit metallisation;
silicon;
elemental semiconductors;
semiconductor-metal boundaries;
hydrogenation;
semiconductor doping;
CMOS integrated circuits;
source;
drain;
gate regions;
CMOS circuits;
substrate hydrogenation;
H plasma treatment;
Ni deposition;
silicidation;
sheet resistance;
600 degC;
NiSi/sub 2/-Si:H;
57.
Growth mechanism of epitaxial NiSi/sub 2/ layer in the Ni/Ti/Si(001) contact for atomically flat interfaces
机译:
Ni / Ti / Si(001)接触中原子平面界面的外延NiSi / sub 2 /层的生长机理
作者:
Nakatsuka
;
O.
;
Okubo
;
K.
;
Sakai
;
A.
;
Zaima
;
S.
;
Yasuda
;
Y.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
nickel compounds;
metallic epitaxial layers;
nickel;
titanium;
ohmic contacts;
annealing;
tensile strength;
growth mechanism;
epitaxial NiSi/sub 2/ layer;
Ni/Ti/Si(001) contact;
atomically flat interfaces;
crystalline structure;
electrical properties;
annealing temperature;
film morphology;
sheet resistance;
in-plane tensile strain;
350 degC;
650 degC;
850 degC;
Ni-Ti-Si;
NiSi/sub 2/;
58.
Implant damage and diffusion behavior of indium in silicon-on-insulator
机译:
铟在绝缘体上硅中的注入损伤和扩散行为
作者:
Chen P.
;
An Z.H.
;
Fu R.K.Y.
;
Liu W.L.
;
Zhu M.
;
Lin C.L.
;
Chu P.K.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon-on-insulator;
SIMOX;
Rutherford backscattering;
secondary ion mass spectra;
indium;
ion implantation;
semiconductor doping;
surface diffusion;
annealing;
implant damage;
diffusion behavior;
silicon-on-insulator;
SIMOX;
Rutherford backscattering spectrometry;
channeling mode;
secondary ion mass spectrometry;
low energy;
low dose implantation;
In diffusion profiles;
recombination center;
point defects;
SiO/sub 2/-Si:B;
59.
Improvement of thermal stability of Ni germano-silicide for nano-scale CMOS technology
机译:
用于纳米级CMOS技术的Ni锗硅化物的热稳定性的改善
作者:
Bin-Feng Huang
;
Soon-Young Oh
;
Jang-Gn Yun
;
Young-Ho Park
;
Hee-Hwan Ji
;
Yong-Goo Kim
;
Jin-Suk Wang
;
Han-Seob Cha
;
Sang-Bum Heo
;
Jeong-Gun Lee
;
Yeong-Cheol Kim
;
Hi-Deok Lee
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
nickel compounds;
thermal stability;
CMOS integrated circuits;
titanium;
nickel;
titanium compounds;
rapid thermal processing;
rapid thermal annealing;
integrated circuit metallisation;
thermal stability;
Ni germano-silicide;
nano-scale CMOS technology;
doped substrate;
tri-layer structures;
Ti/Ni/TiN;
Ni/Ti/TiN;
Co/Ni/TiN;
Ni/Co/TiN;
two-step RTP;
sheet resistance;
613 degC;
60.
Infusion doping for USJ formation
机译:
USJ形成的注入掺杂
作者:
Hautala J.
;
Borland J.
;
Tabat M.
;
Skinner W.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
semiconductor doping;
ion implantation;
silicon;
boron;
elemental semiconductors;
doping profiles;
secondary ion mass spectra;
annealing;
USJ formation;
infusion doping;
ultra shallow junctions;
SIMS;
surface doping levels;
sheet resistance measurements;
nonpenetrating elastic material;
electrically active dopant profiling;
spreading resistance profile;
12 nm;
450 to 950 degC;
Si:B;
B/sub 2/H/sub 6/;
BF/sub 3/;
61.
InGaP/InGaAs dual-channel transistor
机译:
InGaP / InGaAs双通道晶体管
作者:
Hung-Ming Chuang
;
Chii-Maw Uang
;
Shiou-Ying Cheng
;
Chun-Yuan Chen
;
Po-Hsien Lai
;
Chung-I Kao
;
Yan-Ying Tsai
;
Wei-Hsi Hsu
;
Wen-Chau Liu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
indium compounds;
gallium compounds;
gallium arsenide;
III-V semiconductors;
semiconductor heterojunctions;
heterojunction bipolar transistors;
semiconductor quantum wells;
Schottky barriers;
semiconductor device breakdown;
InGaP/InGaAs dual-channel transistor;
heterostructure field-effect transistor;
dual /spl delta/-doped quantum wells;
double channels;
carrier confinement;
Schottky behavior;
device performances;
breakdown voltages;
turn-on voltages;
linear transconductance;
RF properties;
100 micron;
1 micron;
162 mS/mm;
1.74 V;
32.3 GHz;
16 GHz;
400 K;
62.
I-V-T studies on ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2/-Si Schottky contacts
机译:
I-V-T研究三元硅化物Co / sub 1-x / Ni / sub x / Si / sub 2 // n-Si肖特基接触
作者:
Shiyang Zhu
;
Guoping Ru
;
Xinping Qu
;
Van Meirhaeghe
;
R.L.
;
Forment
;
S.
;
Bingzong Li
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
cobalt compounds;
nickel compounds;
silicon;
elemental semiconductors;
Schottky barriers;
VLSI;
annealing;
I-V-T studies;
ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//N-Si Schottky contacts;
solid phase reaction;
Schottky barrier;
barrier height inhomogeneity;
100 to 300 K;
Co/sub 1-x/Ni/sub x/Si/sub 2/-Si;
63.
Low energy implantation technology with decaborane molecular ion beam
机译:
十硼烷分子离子束的低能注入技术
作者:
Umisedo S.
;
Hamamoto N.
;
Sakai S.
;
Tanjyo M.
;
Nagai N.
;
Naito M.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ion implantation;
semiconductor doping;
organic compounds;
molecular beams;
secondary ion mass spectra;
semiconductor junctions;
low energy implantation technology;
decaborane molecular ion beam;
sub-micron device fabrication;
ultra shallow junction;
ion implanters;
ion mass analysis;
energy contaminants elimination;
pant angle control;
space charge effect;
angle deviation;
64.
Novel NiSi technology utilizing Ti/Ni/TiN structure and fluorine implantation for thermal stability improvement by suppression of abnormal oxidation
机译:
利用Ti / Ni / TiN结构和氟注入的新型NiSi技术通过抑制异常氧化来提高热稳定性
作者:
Jang-Gn Yun
;
Soon-Young Oh
;
Hee-Hwan Ji
;
Bin-Feng Huang
;
Young-Ho Park
;
Jin-Suk Wang
;
Hi-Deok Lee
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
titanium;
nickel;
titanium compounds;
fluorine;
ion implantation;
oxidation;
thermal stability;
ULSI;
contact resistance;
semiconductor doping;
NiSi technology;
fluorine ion implantation;
Ti/Ni/TiN structure;
fluorine implantation;
thermal stability improvement;
abnormal oxidation suppression;
source/drain dopants;
Ti-Ni-TiN;
NiSi;
Si:BF/sub 2/;
Si:f;
65.
Numerical simulation of hot-carrier degradation in SOI MOSFETs
机译:
SOI MOSFET中热载流子退化的数值模拟
作者:
Qing Lin
;
Ming Zhu
;
Yan-jun Wu
;
Xin-yun Xie
;
Zheng-xuan Zhang
;
Cheng-lu Lin
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
MOSFET;
silicon-on-insulator;
semiconductor device breakdown;
impact ionisation;
hot carriers;
semiconductor device models;
leakage currents;
semiconductor device reliability;
SOI MOSFET;
hot-carrier degradation;
numerical simulation;
hot-carrier injection;
carrier transport;
carrier trapping;
gate oxide;
physical mechanisms;
LDDMOSFET structure;
VLSI circuits;
reliability;
MEDICI;
gate leakage current;
impact ionization;
Si;
66.
Research for SiGe HBT
机译:
SiGe HBT的研究
作者:
Rongkan Liu
;
Daoguang Liu
;
Koenig U.
;
Gruhle A.
;
Jing Zhang
;
Kaicheng Li
;
Luncai Liu
;
Kibbel H.
;
Zeiler U.
;
Yukui Liu
;
Shiliu Xu
;
Gangyi Hu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
Ge-Si alloys;
heterojunction bipolar transistors;
millimetre wave bipolar transistors;
S-parameters;
etching;
photoresists;
HBT process technology;
S parameter;
radio frequency performances;
cutoff frequency;
maximum oscillation frequency;
high current gain;
base-emitter self-alignment technology;
air-bridge technology;
mesa structure;
metal masking;
positive photoresist;
etching;
Gummel plots;
108 GHz;
157 GHz;
SiGe;
67.
Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT
机译:
AlGaN / GaN HEMT的自洽数值模型和二维电子气的优化
作者:
Ma long
;
Wang yan
;
Yu Zhiping
;
Tian lilin
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
high electron mobility transistors;
SCF calculations;
dielectric polarisation;
two-dimensional electron gas;
piezoelectric semiconductors;
Poisson equation;
Schrodinger equation;
conduction bands;
self-consistent numerical model;
optimization;
two-dimensional electron gases;
AlGaN/GaN HEMT;
MODFETs;
microwave frequencies;
high peak electron velocity;
saturation velocity;
thermal stability;
breakdown fields;
spontaneous polarization effect;
piezoelectric polarization effect;
one-dimensional Poisson-Schrodinger equations;
AlGaN-GaN;
68.
Se-passivated Si(100) surface for low and negative Schottky barriers
机译:
硒钝化的Si(100)表面用于低和负肖特基势垒
作者:
Tao M.
;
Udeshi D.
;
Agarwal S.
;
Kolappan R.
;
Xu Y.
;
Maldonado E.
;
Kirk W.P.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
Schottky barriers;
silicon;
selenium;
elemental semiconductors;
semiconductor-metal boundaries;
interface states;
dangling bonds;
annealing;
Fermi level;
electron affinity;
passivation;
Se-passivated Si(100) surface;
negative Schottky barriers;
low Schottky barriers;
metal work function;
Si electron affinity;
interface states;
interface Fermi level;
terminating dangling bonds;
monolayer;
low ideal barrier heights;
ideal barrier height;
barrier height;
400 degC;
Si;
Al;
Cr;
Ti;
69.
Simulation of implantation into HfO/sub 2/ by MD method
机译:
MD法植入HfO / sub 2 /的模拟
作者:
Huihui Ji
;
Min Yu
;
Hao Shi
;
Xiaokang Shi
;
Ru Huang
;
Xing Zhang
;
Suzuki
;
K.
;
Oka
;
H.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
hafnium compounds;
ion implantation;
semiconductor process modelling;
molecular dynamics method;
energy loss of particles;
secondary ion mass spectra;
dielectric thin films;
molecular dynamics method;
ion implantation simulation;
electronic stopping model;
single electron radius;
reliable fitting value;
SIMS data;
range profiles;
high-k gate material;
LEACS program;
recoil interaction approximation;
moving box method;
reduced CPU time;
5 to 40 keV;
HfO/sub 2/;
70.
Sulfur- and InGaP-passivated heterojunction bipolar transistors
机译:
硫和InGaP钝化异质结双极晶体管
作者:
Tan S.W.
;
Chen H.R.
;
Chen W.T.
;
Chu M.Y.
;
Lour W.S.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
indium compounds;
gallium compounds;
gallium arsenide;
sulphur;
III-V semiconductors;
heterojunction bipolar transistors;
leakage currents;
surface recombination;
InGaP-passivated heterojunction bipolar transistors;
InGaP/GaAs HBT;
emitter-edge thinning InGaP layer;
S-treated GaAs base layer;
base leakage current;
InGaP-GaAs;
GaAs:S;
71.
Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications
机译:
用于ULSI应用的扩散电阻和多晶硅电阻的温度相关特性
作者:
Chii-Maw Uang
;
Hung-Ming Chuang
;
Shen -Fu T.
;
Kong-Beng Thei
;
Po-Hsien Lai
;
Ssu-I Fu
;
Yan-Ying Tsai
;
Wen-Chau Liu
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
CMOS integrated circuits;
ULSI;
resistors;
chemical interdiffusion;
contact resistance;
isolation technology;
rapid thermal annealing;
chemical mechanical polishing;
planarisation;
etching;
silicon;
elemental semiconductors;
temperature-dependent characteristics;
polysilicon resistors;
diffused resistors;
CMOS technology;
cobalt salicide process;
bulk sheet resistance;
interface resistance;
positive temperature coefficient of resistance;
resistor size;
ULSI;
shallow trench isolation;
rapid thermal annealing;
resistor-protect-oxide layer;
chemical mechanical polish;
planar process;
via-hole etching;
metallization process;
Si;
72.
The effect of different mechanism on the characteristics of SiC Schottky barrier diode
机译:
不同机理对SiC肖特基势垒二极管特性的影响
作者:
Yimen Zhang
;
Yuming Zhang
;
Yuehu Wang
;
Renrong Liang
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon compounds;
Schottky barriers;
wide band gap semiconductors;
interface states;
characteristics;
SiC Schottky barrier diode;
Schottky barrier height;
nonuniform barrier height assumption;
2D simulator MEDICI;
interface state density;
73.
The effects of RTA processes on flow pattern defects in Czochralski silicon
机译:
RTA工艺对直拉硅流型缺陷的影响
作者:
Hanfeng Zhang
;
Caichi Liu
;
Qigang Zhou
;
Jing Wang
;
Qiuyan Hao
;
Hongdi Zhang
;
Yangxian Li
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon;
elemental semiconductors;
crystal growth from melt;
rapid thermal annealing;
atomic force microscopy;
voids (solid);
semiconductor growth;
RTA processes;
flow pattern defects;
Czochralski Si;
rapid thermal annealing;
void;
AFM;
optical microscopy;
1100 degC;
1200 degC;
Si;
74.
The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs
机译:
SiGe薄层应变和相关结构参数对SiGe PMOSFET亚阈值特性的影响
作者:
Yang R.
;
Luo J.S.
;
Tu J.
;
Zhang R.Z.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
Ge-Si alloys;
MOSFET;
semiconductor device models;
subthreshold characteristics;
strained PMOSFET;
effective models;
two-dimensional simulator;
subthreshold slope;
vertical structure parameters;
correlative structure parameters;
strained thin layer influence;
energy band diagram;
off-state current;
SiGe;
75.
The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact
机译:
Co / p-poly-Si / sub 0.84 / Ge / sub 0.16 /肖特基接触的不均匀性
作者:
Guang-Wei Wang
;
Guo-Ping Ru
;
Xin-Ping Qu
;
Bing-Zong Li
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
cobalt;
Ge-Si alloys;
Schottky barriers;
semiconductor-metal boundaries;
sputtered coatings;
thermionic emission;
inhomogeneity;
Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact;
Schottky junction;
ion beam sputtering;
thermionic emission model;
Schottky barrier height;
ideality factor;
Co-Si/sub 0.84/Ge/sub 0.16/;
76.
The thermal stability of zirconium aluminate high-k film on strained SiGe layer
机译:
应变SiGe层上铝酸锆高k膜的热稳定性
作者:
Zengfeng Di
;
Miao Zhang
;
Weili Liu
;
Suhua Luo
;
Zhenghua An
;
Zhengxuan Zhang
;
Zhitang Song
;
Chenglu Lin
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
zirconium compounds;
dielectric thin films;
electron beam deposition;
vacuum deposited coatings;
phase separation;
annealing;
permittivity;
noncrystalline structure;
thermal stability;
binding energy;
oxidation;
transmission electron microscopy;
X-ray photoelectron spectra;
X-ray diffraction;
MOSFET;
high-k dielectric films;
strained layer substrate;
ultrahigh vacuum electron-beam evaporation;
thermal stability;
X-ray diffraction;
onset crystallization temperature;
amorphous film;
amorphous interfacial layer;
high-resolution transmission electron microscopy;
XPS;
fully oxidation states;
gate leakage;
microstructure properties;
chemical binding states;
furnace annealing;
amorphous phase separation;
Zr/sub 0.6/Al/sub 0.4/O/sub 1.8/;
77.
Ti/Al/Ni/Au and Ti/Al/Pt/Au multi-layer ohmic contacts on Al/sub x/Ga/sub 1-x/N/GaN heterostructures
机译:
Al / sub x / Ga / sub 1-x / N / GaN异质结构上的Ti / Al / Ni / Au和Ti / Al / Pt / Au多层欧姆接触
作者:
Zhou
;
H.M.
;
Shen
;
B.
;
Chen
;
D.J.
;
Tang
;
N.
;
Chen
;
T.S.
;
Jiao
;
G.
;
Ru
;
L.
;
Zhang
;
R.
;
Shi
;
Y.
;
Zheng
;
Y.D.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
aluminium compounds;
gallium compounds;
semiconductor heterojunctions;
titanium;
aluminium;
nickel;
gold;
platinum;
ohmic contacts;
contact resistance;
annealing;
Ti/Al/Ni/Au;
Ti/Al/Pt/Au multi-layer Ohmic contacts;
unintentionally-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures;
specific contact resistivities;
diffusion;
higher contact resistivity;
metal electrode;
carrier channel;
Ti-Al-Ni-Au;
Ti-Al-Pt-Au;
Al/sub x/Ga/sub 1-x/N-GaN;
78.
Two and three dimensional MOSFETs simulation with density gradient model
机译:
用密度梯度模型模拟二维和三维MOSFET
作者:
Toyabe T.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
MOSFET;
semiconductor device models;
carrier lifetime;
impact ionisation;
semiconductor device breakdown;
hole density;
hole mobility;
2D density gradient model;
3D density gradient model;
drain current characteristics;
quantum effects;
scaled bulk nMOSFET;
nanometer channel length;
tri-gate FinFET;
decananoscale devices;
electron transport;
drift-diffusion approximation;
electron current density;
hole density;
impact ionization generation;
hole transport;
device simulation;
threshold voltage;
short channel effects;
79.
Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure
机译:
高Al含量的Al / sub x / Ga / sub 1-x / N / GaN双异质结构中的二维电子气密度
作者:
Kong
;
Y.C.
;
Zheng
;
Y.D.
;
Zhou
;
C.H.
;
Deng
;
Y.Z.
;
Gu
;
S.L.
;
Shen
;
B.
;
Zhang
;
R.
;
Shi
;
Y.
;
Han
;
P.
;
Jiang
;
R.L.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
aluminium compounds;
gallium compounds;
III-V semiconductors;
wide band gap semiconductors;
two-dimensional electron gas;
semiconductor heterojunctions;
Schrodinger equation;
Poisson equation;
semiconductor quantum wells;
dielectric polarisation;
piezoelectric semiconductors;
conduction bands;
interface states;
two-dimensional electron gas density;
high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure;
coupled Schrodinger and Poisson equations;
sheet densities;
piezoelectric polarization;
large conduction band offset;
Al/sub x/Ga/sub 1-x/N-GaN;
80.
Ultra-shallow junctions for novel device architectures beyond 65 nm node
机译:
超浅结,适用于65 nm以上节点的新型器件架构
作者:
Agarwal A.
;
Gossmann H.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
MOSFET;
ion implantation;
rapid thermal annealing;
semiconductor doping;
doping profiles;
VLSI;
semiconductor junctions;
performance scaling;
ultrashallow junction formation;
ion implantation;
rapid thermal annealing;
high tilt implantation;
thin body devices;
metal-gate technology;
system on chip integration;
2003 ITRS;
lateral dopant profile slope;
MOSFET;
lateral abruptness;
planar CMOS;
vertical device structures;
workfunction tuning;
pattern effect;
81.
Addressing materials and process-integration issues of NiSi silicide process using impurity engineering
机译:
使用杂质工程解决NiSi硅化物工艺的材料和工艺集成问题
作者:
Chi D.Z.
;
Lee R.T.P.
;
Chua S.J.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
nickel compounds;
nanotechnology;
integrated circuit metallisation;
contact resistance;
thermal stability;
Ge-Si alloys;
materials issues;
process-integration issues;
NiSi silicide process;
impurity engineering;
sub-100 nm technology nodes;
surface contaminants;
contact metallization;
line-width independent low resistivity;
low thermal budget;
silicided shallow junction integrity;
100 nm;
NiSi;
GeSi;
82.
Contacts and junctions for the 45nm node
机译:
45nm节点的触点和结
作者:
Taylor W.J.
;
Verret E.
;
Capasso C.
;
Jen-Yee Nguyen
;
Le Boi La
;
Luckowski E.
;
Martinez A.
;
Happ C.
;
Schaeffer J.
;
Raymond M.
;
Tobin P.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
ULSI;
semiconductor junctions;
contact resistance;
45nm node;
contact resistance;
ULSI transistors;
individual components;
contact length;
active doping;
65 nm;
45 nm;
90 nm;
83.
Surface control of interstitial behavior for improved ultrashallow junction formation
机译:
间隙行为的表面控制可改善超浅结的形成
作者:
Seebauer E.G.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
|
2004年
关键词:
silicon;
silicon compounds;
interstitials;
boron;
elemental semiconductors;
photoreflectance;
interface structure;
surface diffusion;
semiconductor doping;
ion implantation;
secondary ion mass spectra;
surface control;
interstitial behavior;
improved ultrashallow junction formation;
surface proximity effects;
transient enhanced diffusion;
dopant profiles;
near-surface band bending;
Si-SiO/sub 2/ interface;
band bending;
Maximum Likelihood estimation;
multivariate statistics;
charged interstitials;
Si-SiO/sub 2/;
84.
Structural and electrical properties of Al/sub 2/O/sub 3/-ZrO/sub 2/ gate dielectrics on silicon-on-insulator
机译:
绝缘体上硅上的Al / sub 2 / O / sub 3 / -ZrO / sub 2 /栅极电介质的结构和电性能
作者:
Zhu M.
;
Chen P.
;
Fu R.K.Y.
;
Liu W.L.
;
Lin C.L.
;
Chu P.K.
会议名称:
《Junction Technology, 2004. IWJT '04. The Fourth International Workshop on》
关键词:
zirconium compounds;
alumina;
dielectric thin films;
silicon-on-insulator;
rapid thermal annealing;
crystallisation;
electron beam deposition;
vacuum deposited coatings;
surface morphology;
atomic force microscopy;
X-ray diffraction;
transmission electron microscopy;
MOSFET;
leakage currents;
noncrystalline structure;
MIS structures;
silicon-on-insulator substrate;
composite films;
gate dielectrics;
electrical properties;
structural properties;
ultrahigh vacuum electron-beam coevaporation;
crystallization temperature;
microstructures;
surface morphology;
high temperature rapid thermal annealing;
x-ray diffraction;
transmission electron microscopy;
atomic force microscopy;
amorphous structure;
suppressed interfacial layer expansion;
current-voltage characteristic;
leakage current properties;
ultrathin SIMOX substrates;
mixed structure;
MOSFET;
Al/sub 2/O/sub 3/-ZrO/sub 2/;
Al-Al/sub 2/O/sub 3/ZrO/sub 2/-Si;
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