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Chemical and electronic structure of SiO_2/Si interfacial transition layer

机译：SiO_2 / Si界面过渡层的化学和电子结构

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摘要

The chemical and electronic structures of SiO_2/Si(1 1 1) and SiO_2/Si(1 0 0) interfacial transition layers are reviewed. It will be shown, considering the penetration of electronic states from the Si substrate into SiO_2 in the analysis of the thickness dependence of the energy loss of O 1s photoelectrons measured with a probing depth of 0.41 nm, that energy barriers for valence electrons, which are almost comparable to those found in SiO_2, were formed when the oxide layer formed on Si(1 1 1) and Si(1 0 0) was thicker than 0.61 and 0.51 nm, respectively. In other words, the SiO_2/Si(1 1 1) and SiO_2/Si(1 0 0) interface defined with electronic band structure exists, respectively, in the oxide located effectively 0.61 and 0.51 nm away from the nominal interface defined with the atomic structure. In other words, incorporation of one atomic layer of oxygen at the interface does not form an electronic barrier. The extreme uniformity of the oxide layer formed on Si(1 0 0) was verified using synchrotron radiation excited high resolution XPS.
机译：综述了SiO_2 / Si（1 1 1）和SiO_2 / Si（1 0 0）界面过渡层的化学和电子结构。将显示出，在分析探测深度为0.41 nm的O 1s光电子的能量损失的厚度依赖性时，考虑到电子状态从Si衬底到SiO_2的渗透，价电子的能垒为当在Si（1 1 1）和Si（1 0 0）上形成的氧化层分别大于0.61和0.51 nm时，形成了几乎与SiO_2中可比的氧化物。换句话说，以电子能带结构定义的SiO_2 / Si（1 1 1）和SiO_2 / Si（1 0 0）界面分别存在于距原子定义的标称界面有效0.61和0.51 nm处的氧化物中结构体。换句话说，在界面处掺入一层氧原子不会形成电子势垒。使用同步辐射辐射激发的高分辨率XPS验证了在Si（1 0 0）上形成的氧化物层的极端均匀性。

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