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首页> 外文期刊>Applied Surface Science >In situ observation of oxygen-induced anisotropic surface etching processes at 6H-SiC(0 0 0 1) by variable temperature scanning tunneling microscope
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In situ observation of oxygen-induced anisotropic surface etching processes at 6H-SiC(0 0 0 1) by variable temperature scanning tunneling microscope

机译：变温扫描隧道显微镜原位观察6H-SiC（0 0 0 1）氧诱导的各向异性表面刻蚀过程

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摘要

The initial reaction of the 6H-SiC(0 0 0 1)3~(1/2) x 3~(1/2) surface with O_2 molecules at 500℃ has been in situ observed using a variable temperature scanning tunneling microscope (STM). When the surface was exposed to O_2 molecules, many bright spike noises were observed. These noises can be attributed to the O_2 molecules rapidly migrating on the surface. With an increase in O_2 exposure, dark lines (L) were formed on the surface. L was elongated toward <1100> directions, which manifests anisotropic surface etching induced by O_2 molecules. No specific site was observed for the starting point of the formation of L. The anisotropic etching process had a tendency of additional L formation at the vicinity of the former L. The process at which L formed a triangular domain was observed in real time. On this basis, the formation mechanism of the domain is discussed.
机译：用变温扫描隧道显微镜（STM）观察了6H-SiC（0 0 0 1）3〜（1/2）x 3〜（1/2）表面与O_2分子在500℃下的初始反应。 ）。当表面暴露于O_2分子时，观察到许多明亮的尖峰噪声。这些噪音可归因于O_2分子在表面快速迁移。随着O_2暴露量的增加，在表面上形成了暗线（L）。 L向<1100>方向伸长，这表明由O_2分子诱导的各向异性表面蚀刻。在形成L的起点上没有观察到特定的位置。各向异性刻蚀工艺具有在先前的L附近形成另外的L的趋势。实时观察到L形成三角形畴的过程。在此基础上，讨论了域的形成机理。

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