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首页> 外文期刊>Applied Surface Science >Some evidences of ordering in InGaP layers grown by liquid phase epitaxy
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Some evidences of ordering in InGaP layers grown by liquid phase epitaxy

机译：液相外延生长InGaP层中有序的一些证据

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摘要

We make a comparative study of the optical and structural characteristics of two In_xGa_(1-x) P(x ≈ 0.5) films nearly lattice matched to GaAs, here referred to as sample S1 and sample S2. The films were grown by liquid phase epitaxy (LPE). Photoluminescence (PL) measurements were performed in a wide temperature and exciting power density range for different polarizations (parallel to the [0 1 1] and [0 1 1] directions) of the emitted radiation. Observations suggest that the In_xGa_(1-x)P layer in one of the samples has the usual characteristics commonly obtained in an LPE grown material, while in the other sample, an anomalous growth took place. Our experimental observations show differences in the layer thickness, the surface morphology, as well as in the structural and optical characteristics such as the 4 K PL energy peak position.
机译：我们对两张几乎与GaAs晶格匹配的In_xGa_（1-x）P（x≈0.5）薄膜的光学和结构特性进行了比较研究，此处称为样品S1和样品S2。通过液相外延（LPE）生长膜。针对发射辐射的不同偏振（平行于[0 1 1]和[0 1 1]方向），在较宽的温度和激发功率密度范围内执行光致发光（PL）测量。观察表明，其中一个样品中的In_xGa_（1-x）P层具有通常在LPE生长材料中获得的通常特性，而在另一个样品中，发生了异常生长。我们的实验观察结果表明，层厚度，表面形态以及结构和光学特性（例如4 K PL能量峰位置）存在差异。

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