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首页> 外文期刊>Applied Surface Science >Violet luminescence emitted from ZnO films deposited on Si substrate by rf magnetron sputtering
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Violet luminescence emitted from ZnO films deposited on Si substrate by rf magnetron sputtering

机译：射频磁控溅射从Si衬底上沉积的ZnO薄膜发出的紫光

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摘要

Highly orientated polycrystalline ZnO films have been deposited on Si substrate at room temperature (RT) by rf magnetron sputtering. A strong violet photoluminescence (PL) located at 402 nm and a weak ultraviolet (UV), PL located at 384 nm are observed when excited with 300 nm light. The former PL originated from the electron transition from conduction band tail states to valence band tail states and the latter is produced due to electron transition from conduction band to valence band. With an increase in intensity of the excitation light, the violet emission peak increases super-linearly and the UV emission increases linearly. After high temperature annealing in air, the crystallinity of obtained films is improved, the violet emission becomes weak and the UV emission gets strong (C) 2002 Published by Elsevier Science B.V. [References: 16]
机译：高度取向的多晶ZnO膜已通过射频磁控溅射在室温（RT）上沉积在Si衬底上。当用300 nm的光激发时，观察到位于402 nm的强紫色光致发光（PL）和位于384 nm的弱紫外（UV）PL。前者的PL起源于从导带尾态到价带尾态的电子跃迁，后者是由于电子从导带到价带跃迁而产生的。随着激发光强度的增加，紫光发射峰超线性增加，而紫外线发射线性增加。在空气中进行高温退火后，所得薄膜的结晶度得到改善，紫光发射变弱，紫外线发射变强（C）2002由Elsevier Science B.V.出版[参考文献：16]

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