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首页> 外文期刊>Applied Surface Science >Low temperature thermal ALD TaN_x and TiN_x films from anhydrous N_2H_4
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Low temperature thermal ALD TaN_x and TiN_x films from anhydrous N_2H_4

机译：来自无水N_2H_4的低温ALD热TaN_x和TiN_x薄膜

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摘要

Thermal ALD of TaNx and TiNx films was performed using hydrazine (N2H4) as a reactive N-containing source. Ultralow temperature (100 degrees C and 300 degrees C) growth of TaNx was observed using N2H4 and tris(diethylamido)(tertbutylimido) tantalum (TBTDET); XPS showed nearly stoichiometric Ta3N5 films were deposited with below 10% O and 5% C incorporation. Stoichiometric TiNx films grown at 300 degrees C with tetrakis(dimethylamido) titanium (TDMAT) showed an RMS roughness below 2 nm consistent with good nucleation density. High conductivity nitride films were grown by a thermal low-temperature TiNx ALD process using anhydrous N2H4 and titanium tetrachloride (TiCl4) from 300 to 400 degrees C; uniform, nearly stoichiometric films of 0.44 nm RMS roughness were deposited. Compared to NH3 grown films, XPS confirmed N2H4 grown films contained fewer O, C, and Cl impurities consistent with lower resistivities being observed with N2H4. The data is consistent with N2H4 serving as a reducing agent and a good proton donor to Ta and Ti ligands.
机译：TaNx和TiNx膜的热ALD使用肼（N2H4）作为含N的反应源进行。使用N2H4和三（二乙基氨基）（叔丁基亚氨基）钽（TBTDET）观察到TaNx的超低温生长（100摄氏度和300摄氏度）； XPS显示以低于10％的O和5％的C掺入量沉积了接近化学计量的Ta3N5薄膜。用四（二甲基氨基）钛（TDMAT）在300摄氏度下生长的化学计量TiNx薄膜显示RMS粗糙度低于2 nm，具有良好的成核密度。在300至400摄氏度之间，使用无水N2H4和四氯化钛（TiCl4），通过热低温TiNx ALD工艺生长高电导率的氮化膜。沉积出均匀的，化学计量比为0.44 nm RMS粗糙度的均匀膜。与NH3生长的膜相比，XPS证实N2H4生长的膜包含较少的O，C和Cl杂质，这与用N2H4观察到的较低电阻率相一致。该数据与作为还原剂和Ta和Ti配体的良好质子供体的N2H4一致。

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