Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience

Paszuk Agnieszka; Supplie Oliver; Nandy Manali; Brueckner Sebastian; Dobrich Anja; Kleinschmidt Peter; Kim Boram; Nakano Yoshiaki; Sugiyama Masakazu; Hannappel Thomas

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Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience

机译：在富砷CVD环境中制备的双层阶梯式Si（100）表面

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Low-defect III-V integration on Si(1 0 0) requires atomically well-ordered heterointerfaces. To this end, we study the interaction of As with Si(1 0 0) surfaces and the formation of dimerized Si(1 0 0): As surfaces in situ with reflection anisotropy spectroscopy during metalorganic chemical vapor deposition (MOCVD). Control of surface processes allows us to intentionally 'rotate' the dimer orientation and choose between predominantly (1x2) and (2x1) reconstructed Si(1 0 0): As surfaces both for low and higher surface misorientation. We also verify that the (2x1) surface reconstruction becomes energetically more favorable for vicinal Si(1 0 0): As surfaces. We explain the preparation of Si(1 0 0): As surfaces displaying an almost single-domain, (1x2) reconstructed surface with an RMS roughness = 1 angstrom and exhibiting broad, atomically flat terraces as well as regular double-layer steps. This surface is highly suitable for subsequent low-defect III-V integration.

机译：Si（1 0 0）上的低缺陷III-V集成需要原子上有序的异质界面。为此，我们利用金属有机化学气相沉积（MOCVD）过程中的反射各向异性光谱研究了As与Si（1 0 0）表面的相互作用以及二聚Si（1 0 0）的形成：As表面。通过控制表面过程，我们可以有意地“旋转”二聚体方向，并在（1x2）和（2x1）重构的Si（1 0 0）主要之间进行选择：作为用于低级和高级表面取向不良的表面。我们还验证了（2x1）表面重构在能量上更适合于邻近Si（1 0 0）：作为表面。我们解释了Si（1 0 0）的制备：由于表面显示几乎是单畴的（1x2）重构表面，RMS粗糙度<= 1埃，并展现出宽广的原子平面平台以及规则的双层台阶。该表面非常适合随后的低缺陷III-V集成。

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来源
《Applied Surface Science》 |2018年第31期|1002-1007|共6页
作者
Paszuk Agnieszka; Supplie Oliver; Nandy Manali; Brueckner Sebastian; Dobrich Anja; Kleinschmidt Peter; Kim Boram; Nakano Yoshiaki; Sugiyama Masakazu; Hannappel Thomas;
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Tech Univ Ilmenau, Inst Phys, Photovolta Grp, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany;

Tech Univ Ilmenau, Inst Phys, Photovolta Grp, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany;

Tech Univ Ilmenau, Inst Phys, Photovolta Grp, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany;

Tech Univ Ilmenau, Inst Phys, Photovolta Grp, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany;

Tech Univ Ilmenau, Inst Phys, Photovolta Grp, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany;

Tech Univ Ilmenau, Inst Phys, Photovolta Grp, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany;

Univ Tokyo, Res Ctr Adv Sci & Technol, Bunkyo Ku, Tokyo 1538904, Japan;

Univ Tokyo, Res Ctr Adv Sci & Technol, Bunkyo Ku, Tokyo 1538904, Japan;

Univ Tokyo, Res Ctr Adv Sci & Technol, Bunkyo Ku, Tokyo 1538904, Japan;

Tech Univ Ilmenau, Inst Phys, Photovolta Grp, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany;

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正文语种 eng
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Metalorganic chemical vapor deposition; Optical in situ spectroscopy; Si(100) surface; Arsenic; III-V-on-silicon;

机译：金属有机化学气相沉积;光学原位光谱;Si（100）表面;砷;硅上III-V族;

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专利

1. Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(100) surfaces [J] . T. Bork, W.E. McMahon, J.M. Olson, Journal of Crystal Growth . 2007,第Jan期

机译：表面科学研究包括在MOCVD制备的，端接为Si（100）的表面上进行低温RDS
2. An RDS, LEED, and STM Study of MOCVD-Prepared Si(100) surfaces [J] . T. Hannappel, W.E. McMahon, J.M. Olson Journal of Crystal Growth . 2004,第1a4期

机译：MOCVD制备的Si（100）表面的RDS，LEED和STM研究
3. An STM and LEED study of MOCVD-prepared P/Ge (100) to (111) surfaces [J] . McMahon WE, Kibbler AE, Olson JM Surface Science . 2004,第1a3期

机译：STM和LEED研究MOCVD制备的P / Ge（100）至（111）表面
4. Investigation of GaP/Si heteroepitaxy on MOCVD prepared Si(100) surfaces [C] . Warren Emily L., Kibbler Alan E., France Ryan M., IEEE Photovoltaic Specialists Conference . 2015

机译：MOCVD制备的Si（100）表面上GaP / Si异质外延的研究
5. Molecular dynamics (MD) simulations of chemical vapor deposition (CVD) of carbon dimer on a diamond (100) surface and application of neural networks (NN) for event probability predictions. [D] . Abdul Samadh, Abdul Nizam. 2005

机译：金刚石（100）表面上碳二聚体的化学气相沉积（CVD）的分子动力学（MD）模拟以及神经网络（NN）的应用，用于事件概率预测。
6. Self-assembly directed one-step synthesis of 4radialene on Cu(100) surfaces [O] . Qing Li, Jianzhi Gao, Youyong Li, -1

机译：在Cu（100）表面上进行4芳烃的自组装定向一步合成
7. Atomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction [O] . Yoshida, S., Sekiguchi, T., Itoh, K. M. 2005

机译：在邻近的si（111）表面上的原子直接台阶在扭结方向上的阶梯并联电流
8. Kinetic Mechanism for the Transformation of Single Layer Steps into Double Layer Steps by Si Deposition on a Vicinal Si(100) Surface. [R] . Zhang, Z., Metiu, H., Lu, Y.-T. 1992

机译：si沉积在si（100）表面上单层台阶转变为双层台阶的动力学机制。

Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience

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