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首页> 外文期刊>Applied Surface Science >High SnS phase purity films produced by rapid thermal processing of RF-magnetron sputtered SnS_(2-x) precursors
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High SnS phase purity films produced by rapid thermal processing of RF-magnetron sputtered SnS_(2-x) precursors

机译：通过RF磁控溅射SnS_（2-x）前体的快速热处理生产的高SnS相纯度薄膜

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摘要

The work reported below aimed at establishing a suitable route to prepare single phase SnS thin films for photovoltaic applications. The growth approach consisted in the deposition of SnS2-x precursor layers by RF-magnetron sputtering followed by rapid thermal annealing. The samples were placed on a graphite susceptor covered with a transparent glass dome in an atmosphere of N2 + 5%H2S, with and without additional tin sulphide vapour in the atmosphere around the samples. The resulting films were studied by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman scattering and spectrophotometry to determine which set of growth conditions yielded the desired properties. In order to minimize the material loss through evaporation, improve the films' morphology and eliminate the residual SnS2 phase, the use of a transparent glass dome to confine the tin sulphide vapour in a smaller volume over the sample, is an effective approach. Clearly, the material loss was reduced. The samples grown on Mo at a low heating rate of 0.2 degrees C/s and 500 degrees C during 5 min showed good properties but still contained residues of the SnS2 phase. By increasing the heating rate to 2 degrees C/s and above, it was possible to eliminate the SnS2 phase and still maintain a good morphology, thus obtaining single phase SnS films deemed as essential for optimized photovoltaic performance. (C) 2018 Elsevier B.V. All rights reserved.
机译：以下报道的工作旨在建立一种合适的方法来制备用于光伏应用的单相SnS薄膜。生长方法包括通过射频磁控溅射沉积SnS2-x前驱体层，然后进行快速热退火。将样品放在N2 + 5％H2S气氛中的，覆盖有透明玻璃圆顶的石墨基座上，样品周围的气氛中有或没有其他硫化锡蒸气。通过扫描电子显微镜，能量分散光谱，X射线衍射，拉曼散射和分光光度法研究所得膜，以确定哪一组生长条件产生所需的性能。为了最大程度地减少蒸发引起的材料损失，改善薄膜的形貌并消除残留的SnS2相，使用透明的玻璃圆顶将硫化锡蒸气限制在较小的样品体积内是一种有效的方法。显然，材料损失减少了。 Mo在5分钟内以0.2摄氏度/秒和500摄氏度的低升温速率在Mo上生长的样品表现出良好的性能，但仍包含SnS2相的残留物。通过将加热速率提高到2℃/ s或更高，可以消除SnS2相并仍保持良好的形态，从而获得被认为对优化光伏性能至关重要的单相SnS膜。 （C）2018 Elsevier B.V.保留所有权利。

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