• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Cu2ZnSnS4 thin film solar cell utilizing rapid thermal process of precursors sputtered from a quaternary target: a promising application in industrial processes
【24h】

Cu2ZnSnS4 thin film solar cell utilizing rapid thermal process of precursors sputtered from a quaternary target: a promising application in industrial processes

机译：Cu2ZnSnS4薄膜太阳能电池利用从四元靶溅射的前驱物进行快速热处理：在工业过程中的应用前景广阔

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Cu2ZnSnS4 (CZTS) thin films have been attracting considerable attention as candidates for new photovoltaic materials. As a typical vacuum process, a sputtering stacked metallic layer followed by a conventional slow thermal process (STP) is usually used. This method is complex and time-consuming. Furthermore, the volatilization of Zn and Sn elements is significant during the STP process. To simplify the CZTS fabrication process and solve the element volatilization problem, in this work CZTS thin film was fabricated using a single quaternary target Radio-Frequency (RF) magnetron sputtering process followed by a rapid thermal process (RTP). The effects of sulfurization temperature on the properties of CZTS thin films have been studied. The compositional analysis shows that a combination of a single target sputtering process and the RTP technique can significantly reduce the volatilization of Zn and Sn elements compared to the conventional STP process. The results of X-ray diffraction (XRD) patterns and Raman scatting spectra show that the sulfurized CZTS thin films have a polycrystalline kesterite crystal structure. If the sulfurization process is performed at lower temperature, a large amount of disorder among the Cu and Zn cations exists in the CZTS thin film which is investigated by using Raman scattering spectra. At 550 degrees C, the CZTS thin film has high quality of crystallinity with large grain size and dense morphology, its band gap energy is found to be 1.53 eV. The solar cell fabricated with the CZTS absorber grown at an optimized sulfurization temperature of 550 degrees C shows a conversion efficiency of 2.85% for a 0.16 cm(2) area with V-oc = 412 mV, J(sc) = 17.9 mA cm(-2), and FF = 40.5%. These results show that this process is suitable for the growth of kesterite CZTS solar cell absorbers.
机译：作为新型光伏材料的候选者，Cu2ZnSnS4（CZTS）薄膜已引起了广泛的关注。作为典型的真空工艺，通常使用溅射堆叠的金属层，然后进行常规的慢热工艺（STP）。该方法复杂且耗时。此外，在STP过程中，Zn和Sn元素的挥发非常明显。为了简化CZTS的制造工艺并解决元素挥发问题，在这项工作中，CZTS薄膜的制造是使用单四元目标射频（RF）磁控管溅射工艺，然后是快速热处理（RTP）。研究了硫化温度对CZTS薄膜性能的影响。成分分析表明，与传统的STP工艺相比，单一靶溅射工艺和RTP技术的结合可以显着减少Zn和Sn元素的挥发。 X射线衍射（XRD）图谱和拉曼散射光谱的结果表明，硫化的CZTS薄膜具有多晶的钾钛矿晶体结构。如果在较低温度下进行硫化过程，则通过拉曼散射光谱研究的CZTS薄膜中会存在大量的铜和锌阳离子杂乱。在550摄氏度时，CZTS薄膜具有高结晶度，大晶粒尺寸和致密形态的质量，发现其带隙能为1.53 eV。用CZTS吸收器制造的太阳能电池在550℃的最佳硫化温度下生长，对于0.16 cm（2）面积的V-oc = 412 mV，J（sc）= 17.9 mA cm（ -2），且FF = 40.5％。这些结果表明该方法适合于钾长石CZTS太阳能电池吸收体的生长。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号